Tunable electroabsorption in gallium arsenide doping superlattices

Chang-Hasnain, C. J.; Hasnain, G.; Johnson, N. M.; Dohler, G. H.; Miller, J. N.; Whinnery, J. R.; Dienes, A.
April 1987
Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p915
Academic Journal
Tuning of the optical absorption coefficient by electrical bias in doping superlattices (n-i-p-i crystals) is demonstrated for the first time by both photoconductivity and transmission measurements at room temperature. The absorption coefficient at 1.04 μm obtained from the photoconductivity measurement varies by a factor of 240 when the p-n junction bias is changed from 0.4 to -1.5 V. A change of transmission up to 22% at 0.89 μm wavelength through a 2.1-μm-thick n-i-p-i crystal is achieved by varying bias merely between 0.6 and -2.0 V. Moreover, the change of transmission is nearly linear with p-n junction bias.


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