Graphite picosecond optoelectronic opening switch

Chauchard, E. A.; Lee, Chi H.; Huang, C. Y.
March 1987
Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p812
Academic Journal
Highly oriented pyrolytic graphite, a conductive material in the dark, is found to exhibit a high resistivity when illuminated by intense laser light. Its operation as an opening switch with a switching time under 1 ns is demonstrated.


Related Articles

  • Double-heterostructure optoelectronic switch as a single quantum well laser. Taylor, G. W.; Cooke, P. // Applied Physics Letters;4/2/1990, Vol. 56 Issue 14, p1308 

    The double-heterostructure optoelectronic switch (DOES) is demonstrated as an N-channel, single quantum well, graded index laser. As a broad-area device, the DOES exhibits excellent electrical switching characteristics of 12 V and 0.04 A cm-2 at the switching condition and 1.8 V and 3.3 A cm-2...

  • A novel quantum-well optoelectronic switching device with stimulated emission. Ou, S.S. // Applied Physics Letters;9/9/1991, Vol. 59 Issue 11, p1296 

    Demonstrates a GaAs/GaAlAs quantum well optoelectronic switching device with stimulated emission. Description of the device structure; Suitability for optical or electrical switching; Values of the obtained threshold current densities, differential quantum efficiencies and output power.

  • Differential optical PnpN switch operating at 16 MHz with 250-fJ optical input energy. Heremans, P.; Kuijk, M. // Applied Physics Letters;7/4/1994, Vol. 65 Issue 1, p19 

    Presents an optoelectric switch pair with an optical sensitivity operating at a speed of 16 megahertz. Components of the switch; Factors contributing to the optical sensitivity of the switch; Measures for the performance of an optoelectronic switch; Necessity of using PnpN devices.

  • Ledistor—a three-terminal double heterostructure optoelectronic switch. Taylor, G. W.; Mand, R. S.; Simmons, J. G.; Cho, A. Y. // Applied Physics Letters;2/9/1987, Vol. 50 Issue 6, p338 

    A three-terminal double heterostructure optoelectronic switching (DOES) device is demonstrated. By making ohmic contact to the active region of the DOES device the switching characteristic may be controlled up to the punchthrough limit. The device emits light in the on state only and various...

  • Optoelectronic transient response of the self-aligned double-heterostructure optoelectronic switch. Crawford, D. L.; Taylor, G. W.; Cooke, P.; Chang, T. Y.; Tell, B.; Simmons, J. G. // Applied Physics Letters;11/7/1988, Vol. 53 Issue 19, p1797 

    Fabrication and characterization of a three-terminal self-aligned double-heterostructure optoelectronic switch in the light-emitting diode configuration are reported. Results demonstrating device switching characteristics are presented, in which switching is triggered by electrical or optical...

  • Double heterostructure optoelectronic switch as a dynamic memory with low-power consumption. Kasahara, K.; Tashiro, Y.; Hamao, N.; Sugimoto, M.; Yanase, T. // Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p679 

    A pnn double heterostructure optoelectronic switch with dual extractor electrodes was dynamically operated as an optical memory with the resulting achievement of 20 μW holding power. This value represents a reduction in holding power of about three orders of magnitude as compared to that of...

  • Simple, linear, and safe light control for laser diodes. Mariani, Tullio; Frediani, Carlo; Ascoli, Cesare // Review of Scientific Instruments;Jun97, Vol. 68 Issue 6, p2594 

    Describes a simple but useful technique for feedback stabilization and modulation of diode lasers. Interposition of an optoelectronic coupler between laser diode and feedback amplifier; Schematic design of the optocoupler-controlled solid state laser.

  • Generalised multiple-lateral-mode rate equation modelling of lasers with selective quantum-well intermixing for improved beam quality. Russell, B. M.; Avrutin, E. A.; Yanson, D. // Optical & Quantum Electronics;Nov2008, Vol. 40 Issue 14/15, p1161 

    A numerical model in terms of rate equations for lateral mode amplitudes for analysing static and dynamic properties of moderately broad stripe (tens of microns) laser diodes is proposed and used for modeling lasers with longitudinally or laterally intermixed passive areas. Introduction of...

  • Plasmonic very-small-aperture lasers. Guo, Baoshan; Song, Guofeng; Chen, Lianghui // Applied Physics Letters;7/9/2007, Vol. 91 Issue 2, p021103 

    The fabrication of plasmonic very-small-aperture lasers is demonstrated in this letter. It is an integration of the surface plasmon structures and very-small-aperture lasers (VSAL). The experimental and numerical results demonstrate that the transmission field can be confined to a spot with...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics