Exceptionally pronounced redistribution of silver in oxygen bombarded silicon

Wittmaack, K.; Menzel, N.
March 1987
Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p815
Academic Journal
Silicon samples covered with thin layers of silver were bombarded with normally incident 10 keV O+2 ions. Using high-resolution (∼2 nm) Rutherford backscattering spectrometry the following stages of beam induced Ag relocation could be identified: (1) rapid incorporation of surface atoms into the bulk of the sample, (2) strong bombardment induced mixing, (3) pronounced profile broadening at high levels of oxygen implantation, and (4) very effective segregation of Ag atoms at the SiO2/Si interface. Upon completion of beam induced oxide formation about 40% of the initial Ag coverage is still retained in the sample. At higher bombardment fluences the backscattering data and secondary ion mass spectrometry measurements reveal a vanishingly small partial sputtering yield for Ag atoms.


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