Tellurium thin-film transistor deposited on polyester film having plasma polymerized films on double-layered gate insulators

Hirai, H.; Sekiguchi, H.; Miyata, S.; Kobayashi, S.
March 1987
Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p818
Academic Journal
A tellurium thin-film transistor deposited on polyester film having plasma polymerized films as double-layered gate insulators has been successfully fabricated. Films of plasma polymerized acetonitrile and benzene were used for the insulator and passivation films of the thin-film transistor, respectively. The attained drain current on-off ratio was about 1×103 at a current density of 0.8 mA/mm2. These values qualify the device to drive the pixels of a twisted nematic liquid crystal display panel.


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