TITLE

Tellurium thin-film transistor deposited on polyester film having plasma polymerized films on double-layered gate insulators

AUTHOR(S)
Hirai, H.; Sekiguchi, H.; Miyata, S.; Kobayashi, S.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p818
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A tellurium thin-film transistor deposited on polyester film having plasma polymerized films as double-layered gate insulators has been successfully fabricated. Films of plasma polymerized acetonitrile and benzene were used for the insulator and passivation films of the thin-film transistor, respectively. The attained drain current on-off ratio was about 1×103 at a current density of 0.8 mA/mm2. These values qualify the device to drive the pixels of a twisted nematic liquid crystal display panel.
ACCESSION #
9822509

 

Related Articles

  • Determination of the concentration of hot-carrier-induced bulk defects in laser-recrystallized polysilicon thin film transistors. Brown, T. M.; Brown, T.M.; Migliorato, P.; Brunner, K.; Abstreiter, G. // Applied Physics Letters;2/21/2000, Vol. 76 Issue 8 

    We present a method to investigate hot carrier induced defects in laser recrystallized polysilicon thin film transistors, based on the use of a structure with front and back gate and the analysis of the off current. The maximum process temperature for these devices was 425 °C. We find that...

  • Surface-scattering effects in polycrystalline silicon thin-film transistors. Valletta, A.; Mariucci, L.; Fortunato, G.; Brotherton, S. D. // Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p3119 

    Mobility reduction, induced at high gate fields by scattering with surface acoustic phonons and surface roughness, has been investigated in self-aligned polycrystalline silicon (polysilicon) thin-film transistors (TFTs). The analysis of this effect can be influenced by the presence of parasitic...

  • Mechanics of rollable and foldable film-on-oil electronics. Suo, Z.; Ma, E.Y.; Gleskova, H.; Wagner, S. // Applied Physics Letters;2/22/1999, Vol. 74 Issue 8, p1177 

    Describes the mechanics of film-on-foil devices in the context of thin film transistors on steel and plastic foils. Functions of transistors after the foils are rolled to small radii of curvature; Reduction of radius size by placing the transistors in the neutral surface.

  • Transistors: All‐Optical‐Input Transistors: Light‐Controlled Enhancement of Plasmon‐Induced Photocurrent (Adv. Funct. Mater. 40/2018). Gao, Xu Dong; Fei, Guang Tao; Zhang, Yao; Zhang, Li De; Hu, Ze Min // Advanced Functional Materials;10/4/2018, Vol. 28 Issue 40, p1 

    No abstract available.

  • Recent and forthcoming publications in pss: Phys. Status Solidi RRL 8/2013.  // Physica Status Solidi - Rapid Research Letters;Aug2013, Vol. 7 Issue 8, p528 

    The article presents abstracts on physics and chemistry topics which include the transparent oxide thin-film transistors, controlled manipulation of single atoms and small molecules, and tetrahertz-induced exciton signatures in semiconductors.

  • Effect of interface roughness on gate bias instability of polycrystalline silicon thin-film transistors. Hastas, N. A.; Dimitriadis, C. A.; Kamarinos, G. // Journal of Applied Physics;10/15/2002, Vol. 92 Issue 8, p4741 

    The effect of the SiO[SUB2]/polycrystalline silicon (polysilicon) interface roughness on the stability of n-channel large grain polysilicon thin-film transistors (TFTs) is investigated. The positive gate voltage of 20 V is used in the bias stress experiments, with the source and drain grounded....

  • Silicon surface tunnel transistor. Reddick, William M.; Amaratunga, Gehan A.J. // Applied Physics Letters;7/24/1995, Vol. 67 Issue 4, p494 

    Presents a model of silicon surface tunnel transistor. Control of interband tunneling to modulate the width of tunneling barrier; Results of two-dimensional computer simulations of the device; Differences in drain current for different gate bias; Overview of the quantum phenomena.

  • An amorphous silicon thin film transistor fabricated at 125 degrees C by dc reactive magnetron.... McCormick, C.S.; Weber, C.E. // Applied Physics Letters;1/13/1997, Vol. 70 Issue 2, p226 

    Examines the fabrication of an amorphous silicon thin film transistor using a direct current reactive magnetron sputtering at a substrate temperature of 125 degrees Celsius. Characterization of structural properties of dielectric layers; Evaluation of electrical quality; Field effect mobility...

  • Oligophenyl-based organic thin film transistors. Gundlach, D.J.; Lin, Y.-Y. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3853 

    Describes the fabrication of organic thin film transistors (TFT) using thermally evaporated films of oligophenyls. Range of the field-effect mobility of TFT; Use of x-ray diffraction in determining molecular ordering in oligophenyls; Role of molecular ordering in obtaining field-effect mobility...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics