TITLE

Optical studies of excitons in Ga0.47In0.53As/InP multiple quantum wells

AUTHOR(S)
Westland, D. J.; Fox, A. M.; Maciel, A. C.; Ryan, J. F.; Scott, M. D.; Davies, J. I.; Riffat, J. R.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p839
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report optical absorption and photoluminescence measurements of excitons in Ga0.47In0.53As/InP multiple quantum wells grown by metalorganic chemical vapor deposition. At 4 K the luminescence linewidth for n=1 heavy-hole excitons is measured to be 7 meV for a 30-period structure with wells of width 154 Ã…. The absorption spectrum at low temperature shows four peaks which we assign to confined heavy-hole excitons. A theoretical calculation of the energies of these states indicates that the ratio of the conduction-band to valence-band energy discontinuities is 45:55.
ACCESSION #
9822500

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics