Molecular beam epitaxial growth and characterization of the dilute magnetic semiconductor Zn1-xFexSe

Jonker, B. T.; Krebs, J. J.; Qadri, S. B.; Prinz, G. A.
March 1987
Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p848
Academic Journal
We report the growth by molecular beam epitaxy of the dilute magnetic semiconductor Zn1-xFexSe on GaAs(100) substrates. The epilayers were characterized in situ by reflection high-energy electron diffraction and Auger electron spectroscopy, and by x-ray θ-2θ and rocking curve measurements. We obtain the variation of lattice parameter and optical band gap for 0≤x≤0.22. Both increase linearly with Fe concentration in this range, but the increase is much less than that reported for Zn1-xMnxSe.


Related Articles

  • Magnetic and crystallographic characterization of Zn0.78Fe0.22Se and FeSe films on GaAs (001). Jonker, B. T.; Krebs, J. J.; Qadri, S. B.; Prinz, G. A.; Volkening, F.; Koon, N. C. // Journal of Applied Physics;4/15/1988, Vol. 63 Issue 8, p3303 

    Reports on the growth of single-crystal epilayers of magnetic semiconductor zinc iron selenium with 0

  • InGaAs Quantum Dots on Cross-Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium. Teeravat Limwongse; Supachok Thainoi; Somsak Panyakeow; Songphol Kanjanachuchai // Journal of Nanomaterials;2013, p1 

    Storage density on magnetic medium is increasing at an exponential rate. The magnetic region that stores one bit of information is correspondingly decreasing in size and will ultimately reach quantum dimensions. Magnetic quantum dots (QDs) can be grown using semiconductor as a host and magnetic...

  • Impedance Spectroscopy of n-CdTe/ p-CdMnTe/ p-GaAs Diluted Magnetic Diode. Yahia, I.; AlFaify, S.; Yakuphanoglu, F.; Chusnutdinow, S.; Wojtowicz, T.; Karczewski, G. // Journal of Electronic Materials;Aug2015, Vol. 44 Issue 8, p2768 

    n-CdTe/ p-CdMnTe/ p-GaAs diluted magnetic diode was grown by molecular beam epitaxy technology. The forward- and reverse-bias capacitance-voltage ( C- V), conductance-voltage ( G- V), series resistance-voltage ( R- V), impedance-voltage ( Z- V), and phase-voltage ( θ- V) characteristics of...

  • Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy. Fujiwara, K.; Nishikawa, Y.; Tokuda, Y.; Nakayama, T. // Applied Physics Letters;3/17/1986, Vol. 48 Issue 11, p701 

    Effects of substrate preparation conditions, i.e., wet chemical and ultrahigh vacuum cleaning preparations, on GaAs oval defects grown by molecular beam epitaxy (MBE) were investigated. It is found that, with our MBE system, the presence of the smaller (<10 μm) ovally shaped defects without...

  • Nucleation and initial growth of GaAs on Si substrate. Rosner, S. J.; Koch, S. M.; Harris, J. S. // Applied Physics Letters;12/29/1986, Vol. 49 Issue 26, p1764 

    The microstructure of thin layers of GaAs grown on Si substrates at low growth temperatures by molecular beam epitaxy was examined using transmission electron microscopy and MeV 4He+ ion channeling angular scan analysis. Crystalline island formation is observed at temperatures as low as 325...

  • Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy. Allen, L. T. P.; Weber, E. R.; Washburn, J.; Pao, Y. C. // Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p670 

    Device quality (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time. Angling of the substrate to expose stable, Ga-rich ledges on the (110) surface has been shown to be the necessary condition for two-dimensional growth. The layers exhibit a room-temperature...

  • Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities. Chen, H. Z.; Ghaffari, A.; Morkoç, H.; Yariv, A. // Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2094 

    Single quantum well, graded refractive index separate confinement heterostucture (SQW GRINSCH) lasers with well thicknesses in the range of 65–480 Å have been grown by molecular beam epitaxy (MBE) on (100) and off of (100) by 4° toward (111) A substrates. The threshold current...

  • Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures. Kaminska, M.; Liliental-Weber, Z.; Weber, E. R.; George, T.; Kortright, J. B.; Smith, F. W.; Tsaur, B-Y.; Calawa, A. R. // Applied Physics Letters;5/8/1989, Vol. 54 Issue 19, p1881 

    GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high...

  • Defects in molecular beam epitaxy grown GaAlAs layers. Feng, S. L.; Zazoui, M.; Bourgoin, J. C. // Applied Physics Letters;7/3/1989, Vol. 55 Issue 1, p68 

    Using deep level transient spectroscopy we characterized the shallow native traps in n-type doped Ga1-xAlxAs layers (with x=0.30 and 0.36) grown by molecular beam epitaxy. A trap lying at 0.18 eV below the conduction band is detected which exists in large concentration within 0.2 μm from the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics