Molecular beam epitaxial growth and characterization of the dilute magnetic semiconductor Zn1-xFexSe

Jonker, B. T.; Krebs, J. J.; Qadri, S. B.; Prinz, G. A.
March 1987
Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p848
Academic Journal
We report the growth by molecular beam epitaxy of the dilute magnetic semiconductor Zn1-xFexSe on GaAs(100) substrates. The epilayers were characterized in situ by reflection high-energy electron diffraction and Auger electron spectroscopy, and by x-ray θ-2θ and rocking curve measurements. We obtain the variation of lattice parameter and optical band gap for 0≤x≤0.22. Both increase linearly with Fe concentration in this range, but the increase is much less than that reported for Zn1-xMnxSe.


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