TITLE

Reactively sputtered RuO2 diffusion barriers

AUTHOR(S)
Kolawa, E.; So, F. C. T.; Pan, E. T-S.; Nicolet, M-A.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p854
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The thermal stability of reactively sputtered RuO2 films is investigated from the point of view of their application as diffusion barriers in silicon contact metallizations with an Al overlayer. Backscattering spectra of Si/RuO2/Al samples and electrical measurements on shallow junction diodes with /TiSi2.3/RuO2/Al contacts both show that RuO2 films are effective diffusion barriers between Al and Si for 30-min annealing at temperatures as high as 600 °C.
ACCESSION #
9822491

 

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