(AlAs)0.5(GaAs)0.5 fractional-layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition

Fukui, Takashi; Saito, Hisao
March 1987
Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p824
Academic Journal
(AlAs)0.5(GaAs)0.5 fractional-layer superlattices with a new periodicity perpendicular to the growth direction was successfully grown by metalorganic chemical vapor deposition on (001) GaAs substrates slightly misoriented toward [110]. The atomic structures were analyzed by x-ray superlattice satellite diffraction. Superlattice periods were exactly the same as the mean distance of each atomic step on the (001) vicinal surface. The results indicate that lateral growth from nucleation at the step edge is the dominant process compared with the two-dimensional nucleation on atomically flat terraces.


Related Articles

  • Growth and characterization of InGaAs/GaAsP strained layer superlattices. Katsuyama, T.; Bedair, S. M.; Giles, N. C.; Burns, R. P.; Schetzina, J. F. // Journal of Applied Physics;7/15/1987, Vol. 62 Issue 2, p498 

    Presents a study that investigated the characteristics of indium-gallium arsenide/gallium arsenide phosphide strained layer superlattices grown by metalorganic chemical vapor deposition on gallium arsenide. Details of the growth of the superlattices; Analysis of the structural properties of the...

  • Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs pn diodes. Carpenter, M. S.; Melloch, M. R.; Lundstrom, M. S.; Tobin, S. P. // Applied Physics Letters;6/20/1988, Vol. 52 Issue 25, p2157 

    We have investigated the dark current-voltage characteristics of GaAs pn homojunctions whose surfaces have been passivated with Na2S and (NH4)2S chemical treatments. Reductions in 2kT perimeter recombination currents by a factor of 3.2 were obtained for the two treatments. A shunt leakage,...

  • Tertiary butylarsine grown GaAs solar cell. Sundaram, V. S.; Arau, B. A.; Avery, J. E.; Bailey, A. L.; Girard, G. R.; Hager, H. E.; Thompson, A. G.; Fraas, L. M. // Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p671 

    High quality, intentionally doped (both p and n type) gallium arsenide layers have been grown using trimethylgallium and tertiary butylarsine in a low-pressure metalorganic chemical vapor deposition reactor. Using an alternate arsenic source, namely, tertiary butylarsine, a concentrator GaAs...

  • CdS/CdSe intrinsic Stark superlattices. Halsall, M. P.; Nicholls, J. E.; Davies, J. J.; Cockayne, B.; Wright, P. J. // Journal of Applied Physics;1/15/1992, Vol. 71 Issue 2, p907 

    Studies the strained layer superlattices of wurtzite cadmium compound grown on a gallium arsenide substrates by metalorganic chemical vapor deposition and their optical properties by photoluminescence spectroscopy. Characteristics of wurtzite II-VI semiconductors; Details on the growth of the...

  • Step ordering induced by nonplanar patterning of GaAs surfaces. Dalla Volta, A.; Vvedensky, D. D.; Gogneau, N.; Pelucchi, E.; Rudra, A.; Dwir, B.; Kapon, E.; Ratsch, C. // Applied Physics Letters;5/15/2006, Vol. 88 Issue 20, p203104 

    We report the observation and theory of the morphological evolution of vicinal (001) ridges on V-grooved GaAs surfaces during metal organic vapor-phase epitaxy. The pattern of the nonplanar substrate induces unusual ordering of monatomic steps, different from the free step flow observed on a...

  • Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic.... Kamiya, Itaru; Tanaka, H. // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1238 

    Examines the existence of arsenic dimers and multilayers on (001)gallium arsenide (GaAs) surface under organometallic chemical vapor deposition (OMCVD). Achievement of reflectance-difference spectra from the surfaces; Attainment of (2X4)- and c(4X4)-like surface terminations on (001)GaAs;...

  • Low loss InGaAs/InP multiple quantum well waveguides. Koren, U.; Miller, B. I.; Koch, T. L.; Boyd, G. D.; Capik, R. J.; Soccolich, C. E. // Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1602 

    Double heterostructure planar waveguides with an InGaAs/InP multiple quantum well (MQW) core and InP cladding layers were grown by atmospheric pressure metalorganic chemical vapor deposition. Ridge waveguides had a low propagation loss of 0.8 dB/cm for 1.52 μm input light. The indices of...

  • 14.5% conversion efficiency GaAs solar cell fabricated on Si substrates. Itoh, Yoshio; Nishioka, Takashi; Yamamoto, Akio; Yamaguchi, Masafumi // Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1614 

    AlGaAs-GaAs heteroface p+-p-n solar cells have been fabricated directly on Si substrates using metalorganic chemical vapor deposition. GaAs on Si solar cell efficiency as high as exceeding 14.5% at AM1.5 was obtained by cleaning the substrate surface and repeating GaAs film growth interruption....

  • Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor deposition. Feketa, D.; Chan, K. T.; Ballantyne, J. M.; Eastman, L. F. // Applied Physics Letters;12/15/1986, Vol. 49 Issue 24, p1659 

    A graded-index separate-confinement strained-layer quantum well laser with pseudomorphic Ga0.63In0.37As quantum well was grown by metalorganic chemical vapor deposition. The lasing wavelength is 0.99 μm at 300 K and the average threshold current density of broad area 146×363 μm devices...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics