Oxidation behavior of Au-Si films

Hewett, C. A.; Lau, S. S.
March 1987
Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p827
Academic Journal
We have investigated the oxidation behavior of co-deposited Au-Si films at low temperatures (∼200 °C). Alloys spanning the Au-Si phase diagram have been examined. Films with greater than 40 at. % Au were found to oxidize forming SiO2, while films with less than 40 at. % Au were found to be relatively stable in an oxidizing ambient. This phenomenon was used to form Au lines with a self-passivating SiO2 coating. The resistivity of these lines is estimated to be 6–10 μΩ cm.


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