TITLE

Resonant tunneling in a GaAs/AlGaAs barrier/InGaAs quantum well heterostructure

AUTHOR(S)
Reed, M. A.; Lee, J. W.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/30/1987, Vol. 50 Issue 13, p845
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Resonant tunneling through a GaAs contact/double AlGaAs barrier/single InGaAs quantum well strained-layer heterostructure was investigated. The structure exhibits negative differential resistance up to 275 K due to tunneling through the first excited state of the quantum well. Comparison of the observed peak positions with theory indicates that the conduction-band offset of the AlGaAs/InGaAs heterojunction is nearly 100%. Using the magnetic field dependence of the current-voltage characteristics, we have measured the effective mass of an electron while transiting a multicomponent quantum well tunneling structure. An effective mass for electrons in the InGaAs quantum well of approximately half the bulk effective mass is obtained.
ACCESSION #
9822468

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics