TITLE

Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As

AUTHOR(S)
Lang, D. V.; Panish, M. B.; Capasso, F.; Allam, J.; Hamm, R. A.; Sergent, A. M.; Tsang, W. T.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p736
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We discuss the use of admittance spectroscopy to measure the band offsets of semiconductor heterojunctions. By using this method to analyze the dynamic response of p-n junctions containing lattice-matched InP/Ga0.47In0.53As superlattices we can independently determine both the conduction- and valence-band offsets for this materials system. We find that the sum of these offsets equals the known band-gap difference between InP and Ga0.47In0.53As and that the ratio of the conduction-band offset to the valence-band offset is 42:58.
ACCESSION #
9822447

 

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