TITLE

Trap-Auger recombination in silicon of low carrier densities

AUTHOR(S)
Landsberg, P. T.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p745
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report an analysis of recent accurate room-temperature lifetime measurments τ as a function of injected electron concentration n (equal to injected hole concentration). Instead of the earlier authors’ fit to a curve τ-1=a+bn2, we have used τ-1=α+βn+γn2, and have given theoretical formulae for α, β, and γ. An excellent fit for <100> silicon suggests for γ a sum of the electron and hole band-band Auger coefficients∼10-30 cm6 s-1, half the value given earlier, but still larger than the accepted value. The importance of the β term is that it indicated that a trap-band Auger effect plays a part. The relevant recombination coefficient, identified from the fit, has the reasonable value∼10-24 cm6 s-1. The effect seems important in spite of the low residual defect concentration.
ACCESSION #
9822442

 

Related Articles

  • Dissociative electron attachment in nanoscale ice films: Temperature and morphology effects. Simpson, W.C.; Sieger, M.T.; Orlando, T.M.; Parenteau, L.; Nagesha, K.; Sanche, L. // Journal of Chemical Physics;11/22/1997, Vol. 107 Issue 20, p8668 

    Examines temperature and morphology effects of the dissociative electron attachment in nanoscale ice films. Three low-energy peaks arising from excitation; Formation of a transient anion state that dissociates and/or decays into a dissociative excited state; Variation in energies and ion yields...

  • Low-energy electron scattering cross section for the production of CO within condensed acetone. Lepage, M.; Michaud, M.; Sanche, L. // Journal of Chemical Physics;9/1/2000, Vol. 113 Issue 9 

    We report on the low-energy electron induced production of CO within thin solid films of acetone condensed at low temperature on a solid Ar substrate. The CO fragments, which remain trapped within the bulk of the acetone film, are detected in situ via their first electronic state a [sup 3]Π...

  • Bragg-diffraction x-ray spectrographs for the determination of T[sub e] in 2--3-mm-sized... Failor, B.H.; Hsing, W.W.; Hockaday, R.G.; Shepard, T.D.; Klem, D.E.; Kalantar, D.H.; MacGowan, B.J. // Review of Scientific Instruments;Jan1995, Vol. 66 Issue 1, p767 

    Develops a spectrograph to measure the electron temperature in gas-filled targets and low-density foams. Capacity of the device to simultaneously record line emissions; Estimates of the electron temperature to compensate for the instrumental response.

  • Electron temperature fluctuation measurements and techniques in the DIII-D tokamak Rettig, C L; Peebles, W A; Lohr, J; Austin, M E. // Review of Scientific Instruments;Jan1997, Vol. 68 Issue 1, p484 

    Describes a system that employs cross correlation of same-sightline signals to evaluate the absolute electron temperature fluctuation level in the DIII-D tokamak. Effect of large rotation in the discharges due to neutral beam injection and extremely low fluctuation levels in enhanced...

  • Local channel temperature measurements on pseudomorphic high electron mobility transistors by photoluminescence spectroscopy. Landesman, J. P.; Depret, B.; Fily, A.; Nagle, J.; Braun, P. // Applied Physics Letters;3/16/1998, Vol. 72 Issue 11 

    Spatially resolved photoluminescence (PL) measurements have been performed on GaAs/GaInAs/GaAlAs pseudomorphic high electron mobility transistors to determine the local temperature on both sides of the gate with spatial resolution of about 1 μm and temperature resolution better than 1 °C....

  • Electron temperature control by varying size of slits made in a grid. Kato, Kohgi; Shimizu, Tetsuji; Iizuka, Satoru; Sato, Noriyoshi // Applied Physics Letters;1/31/2000, Vol. 76 Issue 5, p547 

    Electron temperature is controlled by varying the length of slits made in a grid immersed in a weakly ionized discharge plasma. The grid, which is kept at floating potential, has six slits in this experiment. With a decrease in the slit length from 6 to 0 cm, the electron temperature decreases...

  • RASS Developments on the VHF Radar at CNRM/Toulouse Height Coverage Optimization. Klaus, V.; Chérel, G.; Goupil, P.; Pénetier, N. // Journal of Atmospheric & Oceanic Technology;Jun2002, Vol. 19 Issue 6, p967 

    A method is presented to optimize the height coverage of virtual temperature profiles using the Radio Acoustic Sounding System (RASS) on a 45-MHz monostatic wind profiler. It has already been shown that the main limitation in the maximum height coverage for VHF radar is the effect of wind that...

  • Who's Responsible for Thermal Design? Cottle, Wayne // Printed Circuit Design;Jul2001, Vol. 18 Issue 7, p10 

    Discusses the role of engineers and designers in thermal design of printed circuit board (PCB). Conceptual design process in thermal design; Common questions and answers about thermal design; Advance software available for conducting thermal analysis.

  • Temperature monitor measures three thermal zones. Pratt, Susan // EDN Europe;Jan2004, Vol. 49 Issue 1, p65 

    The article discusses how to design a temperature monitor that measures three thermal zones. Type of single-channel temperature needed; Diagram showing a system that measures the temperature of three remote thermal zones; Function of diode-connected transistors.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics