Perforation seed structure in electron beam recrystallized silicon-on-insulator films

Horita, Susumu; Ishiwara, Hiroshi
March 1987
Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p748
Academic Journal
A novel perforation seed structure in electron beam recrystallization of silicon-on-insulator (SOI) films has been proposed, in which seed regions typically with rectangular shapes are separately arranged along a line, so that voids are not generated in the films during the melting and recrystallization process. The structure was designed based on investigation of the void generation mechanism and its optimum dimensions were determined experimentally from viewpoints of the void suppression effect and the crystalline quality of the SOI films.


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