TITLE

Perforation seed structure in electron beam recrystallized silicon-on-insulator films

AUTHOR(S)
Horita, Susumu; Ishiwara, Hiroshi
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p748
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel perforation seed structure in electron beam recrystallization of silicon-on-insulator (SOI) films has been proposed, in which seed regions typically with rectangular shapes are separately arranged along a line, so that voids are not generated in the films during the melting and recrystallization process. The structure was designed based on investigation of the void generation mechanism and its optimum dimensions were determined experimentally from viewpoints of the void suppression effect and the crystalline quality of the SOI films.
ACCESSION #
9822441

 

Related Articles

  • Consideration on the void generation mechanism in electron-beam recrystallized silicon-on-insulator films. Horita, Susumu; Ishiwara, Hiroshi // Journal of Applied Physics;3/1/1989, Vol. 65 Issue 5, p2057 

    Investigates void generation phenomena in silicon-on-insulator films in the pseudoline electron-beam recrystallization method, in which a linear molten zone is formed by a fast-scanned spot electron beam. Purpose of the melting and recrystallization technique using energy sources; Deposition of...

  • Large-area defect-free silicon-on-insulator films by zone-melt recrystallization. Pandya, R.; Martinez, A. // Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p901 

    Large areas of defect-free silicon-on-insulator (SOI) films have been obtained by softening (lowering the viscosity) a layer underlying the silicon film. During zone-melt recrystallization this sublayer provides a stress relief mechanism and relieves mechanical constraints for the growing...

  • Absence of electrical activity at high-angle grain boundaries in zone-melt-recrystallized.... Evans, P.V.; Smith, D.A. // Applied Physics Letters;1/27/1992, Vol. 60 Issue 4, p439 

    Examines the use of zone-melt-recrystallization of silicon-on-insulator films for electrical characterization of tilt grain boundaries. Absence of defect gap states after high-temperature annealing; Implication of electron channeling patterns for the misorientation of grain boundaries;...

  • Mechanics of the silica cap during zone melting of Si films. Dutartre, D. // Journal of Applied Physics;8/1/1989, Vol. 66 Issue 3, p1388 

    Presents information on a study which performed zone melting recrystallization of polycrystalline silicon films on oxidized wafers using linear strip heaters to obtain good quality silicon-on-insulator (SOI) films. Elimination of the effects related to variations of the in-plane...

  • Orientation control of the silicon film on insulator by laser recrystallization. Sugahara, K.; Kusunoki, S.; Inoue, Y.; Nishimura, T.; Akasaka, Y. // Journal of Applied Physics;11/15/1987, Vol. 62 Issue 10, p4178 

    Deals with a study which investigated the influence of the growth direction and the solidification speed on crystal quality of the silicon (Si)-on-insulator (SOI) film by laser recrystallization. Relation between liquid-solid interface and planes responsible for crystal growth; Growth direction...

  • Hydrogen as the cause of pit formation during laser recrystallization of silicon-on-insulator films. Willems, G. J.; Maes, H. E. // Journal of Applied Physics;11/1/1989, Vol. 66 Issue 9, p4444 

    Studies the formation of pits during laser recrystallization of silicon-on-insulator films. Overview of chemically vapor deposited (CVD) materials tested for their ability to induce pits; Hypothesis of growing gas bubbles; Ability of CVD materials to induce pits after an anneal treatment.

  • Characterization of silicon-on-insulator films recrystallized by an obliquely scanned pseudoline electron beam. Horita, Susumu; Ishiwara, Hiroshi // Journal of Applied Physics;2/1/1987, Vol. 61 Issue 3, p1006 

    Presents studies on the growth characteristics of silicon-on-insulator films recrystallized by an obliquely scanned pseudoline electron beam. Information on the heat flow and thermal profile in the substrate produced by an obliquely scanned pseudoline beam; Experimental procedure considered in...

  • Direct observation of growth front movement in electron beam recrystallization of silicon layer on insulator. Inoue, Tomoyasu; Hamasaki, Toshihiko // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p971 

    A high-speed movie technique was used to investigate the growth front movement during electron beam recrystallization of thin silicon layers on insulating material. In a laterally epitaxial growth process, it was clearly observed that the molten zone shape dramatically changes across a seed...

  • Silicon-on-insulator structures formed by a line-source electron beam: Experiment and theory. Knapp, J. A. // Journal of Applied Physics;10/1/1985, Vol. 58 Issue 7, p2584 

    Presents a study that developed heat flow calculations for silicon-on-insulator structures formed by a line-source electron beam. Features of a line-source electron-beam system; Analysis of the optical micrographs of the samples; Comparison of the calculated and experimental results.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics