Effects of surface defects on the orientation of NiSi2 formed on Si (111) substrates

Akinci, Gulden; Ohno, Timothy; Williams, Ellen D.
March 1987
Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p754
Academic Journal
The effects of surface reconstruction, surface steps, and deposition temperature on the growth of NiSi2 on Si(111) have been investigated using low-energy electron diffraction and Auger electron spectroscopy. Surface reconstruction was changed by diffusion of Ni into the substrate, forming a ((19)1/2×(19)1/2) R±23.4° structure. On planar (unstepped) Si(111), the formation of the two domains of NiSi2 occurs under the same conditions on the (19)1/2 and the clean surface (7×7) reconstructions. On vicinal (stepped) Si(111), different step structures form on the clean and Ni-diffused surfaces. The growth of NiSi2 proceeds differently on the two step structures, both cases being different from growth on the planar surfaces. Specific types of step edges, <110> vs <112>, appear to favor formation of type B or type A silicides, respectively. At deposition temperatures above 200 °C, a considerable amount of Ni diffuses into the Si substrate without reacting. However, the orientation of the silicide which does form is the same as at lower deposition temperature.


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