Molecular beam epitaxial growth of high-purity AlGaAs

Cunningham, J. E.; Tsang, W. T.; Chiu, T. H.; Schubert, E. F.
March 1987
Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p769
Academic Journal
We report molecular beam epitaxial (MBE) growth of AlGaAs in the previously unexplored temperature range exceeding 800 °C for which excellent material can be achieved. Photoluminescence reveals bound excitonic linewidth as sharp as 3.6 meV, which is among the narrowest ever reported for material of equivalent Al mole fraction. In this temperature range carbon impurity concentrations are found to be dramatically reduced while temperature-dependent data provide information from which an understanding of carbon incorporation during MBE growth emerges.


Related Articles

  • Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates. Tsui, R. K.; Kramer, G. D.; Curless, J. A.; Peffley, M. S. // Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p940 

    In many instances the intrinsic photoluminescence at low temperatures of (Al,Ga)As/GaAs single quantum well structures grown by molecular beam epitaxy is weak and broad, unlike the case for most multiple quantum well structures. This is believed to be due to the microscopic roughness of the...

  • Galvanomagnetic properties of lead-telluride quantum wells. Heremans, J.; Partin, D. L.; Dresselhaus, P. D.; Shayegan, M.; Drew, H. D. // Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p928 

    The first in-plane galvanomagnetic measurements on PbTe quantum wells are presented. The samples were 70-Ã…-wide wells sandwiched between lattice-matched PbEuSeTe layers which have 500 meV gaps. PbTe has a 187 meV gap at 0 K. The magnetoresistance and Hall effect were measured from 0 to 22 T...

  • Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates. Meier, H. P.; Van Gieson, E.; Walter, W.; Harder, C.; Krahl, M.; Bimberg, D. // Applied Physics Letters;1/30/1989, Vol. 54 Issue 5, p433 

    GaAs/AlGaAs quantum wells (QWs) were grown by molecular beam epitaxy on GaAs (100) substrates patterned with ridges and grooves in the [011] direction. Low-temperature cathodoluminescence was used to measure the Al fraction and QW thickness on top of the ridges and grooves as a function of ridge...

  • Photocurrent spectroscopy of InxGa1-xAs/GaAs multiple quantum wells. Yu, P. W.; Sanders, G. D.; Evans, K. R.; Reynolds, D. C.; Bajaj, K. K.; Stutz, C. E.; Jones, R. L. // Applied Physics Letters;5/29/1989, Vol. 54 Issue 22, p2230 

    Photocurrent spectra of InxGa1-xAs/GaAs multiple quantum well structures grown by molecular beam epitaxy are studied in the presence of electric fields perpendicular to the heterointerface. Several Δn=0 allowed and Δn≠0 forbidden excitonic transitions are observed. Both negative...

  • Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxy. Maierhofer, Ch.; Munnix, S.; Bimberg, D.; Bauer, R. K.; Mars, D. E.; Miller, J. N. // Applied Physics Letters;7/3/1989, Vol. 55 Issue 1, p50 

    A simultaneous reduction of interface roughness and of impurity and trap incorporation in GaAs/AlGaAs quantum wells is observed for a decrease of the molecular beam epitaxy growth rate below its standard value 1 μm/h, down to 0.1 μm/h, at a substrate temperature of 620 °C. Thus, layer...

  • A new compressively strained-layer p-type InGaAs/AlGaAs/GaAs step bound to miniband quantum well infrared photodetector with a detection peak at 10.4 μm. Chu, J.; Li, Sheng S.; Ho, Pin // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1258 

    Investigation of a InGaAs/AlGaAs/GaAs p-type step bound-to-miniband compressively strained layer quantum well infrared photodetector grown on (100) semi-insulating GaAs has been made. A long wavelength infrared detection peak at 10.4 μm with a full width at half-maximum bandwidth,...

  • Dark current and infrared absorption of p-doped InGaAs/AlGaAs strained quantum wells. Zhang, D. H.; Shi, W. // Applied Physics Letters;8/24/1998, Vol. 73 Issue 8 

    The dark current as a function of temperature and infrared absorption of the p-doped In[sub 0.15]Ga[sub 0.85]As/Al[sub 0.45]Ga[sub 0.55]As multiple quantum well structures grown by molecular beam epitaxy are investigated. The dark current I[sub d] of the structure is found to be basically...

  • Gas-source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple... Hou, H.Q.; Tu, C.W.; Chu, S.N.G. // Applied Physics Letters;6/24/1991, Vol. 58 Issue 25, p2954 

    Studies gas-source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures. Control of the arsenic composition over a wide range; Results of structural and optical studies.

  • Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy. Gerard, Jean-Michel; Le Roux, Guy // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3452 

    Examines growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy. Measurement of the equilibrium composition X[sub e] of the surface monolayer(ML); Technique for probing the composition X[sub s] of the surface ML; Adjustment of the amount of InAs to be...

  • Intersubband hole absorption in GaAs-GaInP quantum wells grown by gas source molecular beam epitaxy. Brown, G.J.; Hegde, S.M. // Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1130 

    Examines the growth of p-doped GaAs-GaInP quantum wells on GaAs substrate by gas source molecular beam epitaxy. Exhibition of structural quality by x-ray diffraction; Measurement of photoluminescence full width at half-maximum; Observation of strong hole intersubband absorption; Light...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics