TITLE

Molecular beam epitaxial growth of high-purity AlGaAs

AUTHOR(S)
Cunningham, J. E.; Tsang, W. T.; Chiu, T. H.; Schubert, E. F.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p769
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report molecular beam epitaxial (MBE) growth of AlGaAs in the previously unexplored temperature range exceeding 800 °C for which excellent material can be achieved. Photoluminescence reveals bound excitonic linewidth as sharp as 3.6 meV, which is among the narrowest ever reported for material of equivalent Al mole fraction. In this temperature range carbon impurity concentrations are found to be dramatically reduced while temperature-dependent data provide information from which an understanding of carbon incorporation during MBE growth emerges.
ACCESSION #
9822431

 

Related Articles

  • 1.42 μm continuous-wave operation of GaInNAs laser diodes. Gollub, D.; Moses, S.; Fischer, M.; Forchel, A. // Electronics Letters;5/15/2003, Vol. 39 Issue 10, p777 

    Continuous-wave (CW) operation of GaInNAs laser diodes in the 1.4 mm range has been realised for the first time. A GaInNAs double quantum well separate confinement heterostructure was grown by solid source molecular beam epitaxy. Threshold currents as low as 66 mA and external efficiencies as...

  • InGaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial... Lei, C.; Rogers, T.J.; Deppe, D.G.; Streetman, B.G. // Applied Physics Letters;3/18/1991, Vol. 58 Issue 11, p1122 

    Presents data demonstrating a design and fabrication process for the realization of high-efficiency, low-threshold vertical-cavity InGaAs-GaAs quantum well lasers with light emission through the top surface. Use of a two-step molecular beam epitaxial growth process to utilize lateral current...

  • Quantum Hall effect in InAs/AlSb quantum wells. Hopkins, P.F.; Rimberg, A.J.; Westervelt, R.M.; Tuttle, G.; Kroemer, H. // Applied Physics Letters;4/1/1991, Vol. 58 Issue 13, p1428 

    Demonstrates the realization of a high mobility two-dimensional electron gas in doped InAs/AlSb quantum wells grown on GaAs substrates by molecular beam epitaxy. Use of low-temperature electron transport measurements in the study; Results of magnetoresistance and Hall measurements.

  • Gas-source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple... Hou, H.Q.; Tu, C.W.; Chu, S.N.G. // Applied Physics Letters;6/24/1991, Vol. 58 Issue 25, p2954 

    Studies gas-source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures. Control of the arsenic composition over a wide range; Results of structural and optical studies.

  • Growth of analog Al[sub x]Ga[sub 1-x]As/GaAs parabolic quantum wells by molecular beam epitaxy. Wang, S.M.; Treideris, G.; Chen, W.Q.; Andersson, T.G. // Applied Physics Letters;1/4/1993, Vol. 62 Issue 1, p61 

    Examines the growth of analog Al[sub x]Ga[sub 1-x]As/GaAs parabolic quantum wells by molecular beam epitaxy. Analysis of the ramping rate; Display of clear interband transitions; Confirmation on the parabolic shape of the quantum well.

  • Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy. Gerard, Jean-Michel; Le Roux, Guy // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3452 

    Examines growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy. Measurement of the equilibrium composition X[sub e] of the surface monolayer(ML); Technique for probing the composition X[sub s] of the surface ML; Adjustment of the amount of InAs to be...

  • Al[sub x]Ga[sub 1 - x]As/GaAs quantum well structures grown by metalorganic molecular beam.... Courboules, B.; Deparis, C. // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p836 

    Examines the growth of AlGaAs/GaAs quantum well structures by metalorganic molecular beam epitaxy. Application of dimethylethylamine alane (DMEAA) as an aluminum precursor; Use of DMEAA for growth rate calibration and alloy composition; Characterization of quantum wells by photoluminescence...

  • Indium migration control on patterned substrates for optoelectronic device applications. Pratt, A.R.; Williams, R.L. // Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p1009 

    Demonstrates the growth of strained layer InGaAs/GaAs quantum wells by molecular beam epitaxy on patterned (100) GaAs substrates. Dependence of indium migration on the arsenic flux during growth; Characteristics of the grown structures; Change in the number of active quantum wells between...

  • Intersubband hole absorption in GaAs-GaInP quantum wells grown by gas source molecular beam epitaxy. Brown, G.J.; Hegde, S.M. // Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1130 

    Examines the growth of p-doped GaAs-GaInP quantum wells on GaAs substrate by gas source molecular beam epitaxy. Exhibition of structural quality by x-ray diffraction; Measurement of photoluminescence full width at half-maximum; Observation of strong hole intersubband absorption; Light...

  • Growth and characterization of p-type HgTe/Hg[sub 1-x]Cd[sub x]Te single quantum wells using nitrogen and arsenic. Ortner, K.; Zhang, X. C.; Oehling, S.; Gerschu¨tz, J.; Pfeuffer-Jeschke, A.; Hock, V.; Becker, C. R.; Landwehr, G.; Molenkamp, L. W. // Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3980 

    p-type HgTe/Hg[sub 0.3]Cd[sub 0.7]Te(001) quantum wells (QWs) have been grown with molecular-beam epitaxy (MBE) on Cd[sub 0.96]Zn[sub 0.04]Te substrates using modulation doping techniques. Both plasma-excited nitrogen and evaporated cadmium arsenide have been utilized for in situ doping during...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics