TITLE

Novel optoelectronic single quantum well devices based on electron bleaching of exciton absorption

AUTHOR(S)
Kastalsky, A.; Abeles, J. H.; Leheny, R. F.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p708
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Novel planar optoelectronic devices with two-dimensional exciton absorption controlled by free-carrier-induced bleaching are proposed. Exciton-resonant light propagates along a single mode rib waveguide containing a single quantum well (SQW), the only absorbing medium in the waveguide. Three such devices operating as optical modulators are (1) a gate-controlled field-effect transistor optical modulator (FETOM), (2) an optically readable memory element, and (3) an optically switched charge storage device. The FETOM, in which free-carrier density in the SQW is controlled by gate voltage, offers high speed (37.5 ps), small size (125 μm), and low power (86 nW/MHz).
ACCESSION #
9822423

 

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