Segregation and drift of arsenic in SiO2 under the influence of a temperature gradient

Celler, G. K.; Trimble, L. E.; West, K. W.; Pfeiffer, L.; Sheng, T. T.
March 1987
Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p664
Academic Journal
We have found that arsenic implanted into SiO2 segregates at high temperatures into As-rich spherical inclusions of 50–500 Å in diameter, provided that there is no free oxygen in the SiO2 and the initial As concentration exceeds 1 at. %. The phase separation suppresses the diffusion of arsenic, even at temperatures as high as 1400 °C. We have discovered, however, that the As-rich inclusions can be easily moved in a temperature gradient. They migrate towards the heat source at a rate of 2300 Å/h in a gradient of 0.14 °C/μm, at 1405 °C, permitting their efficient removal from the oxide and into silicon.


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