Alternatives to arsine: The atmospheric pressure organometallic chemical vapor deposition growth of GaAs using triethylarsenic

Speckman, D. M.; Wendt, J. P.
March 1987
Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p676
Academic Journal
Studies on the homoepitaxial growth of unintentionally doped GaAs by atmospheric pressure organometallic chemical vapor deposition using triethylarsenic and trimethylgallium have been carried out, and the effects of growth temperature, V/III ratio, and flow rate on film characteristics are reported. Mirrorlike epitaxial layers of n-type GaAs were obtained at substrate temperatures of 540–650 °C and at V/III ratios of 6.7–11. The carrier concentrations for these films were approximately 1016–1017 cm-3, and from secondary ion mass spectroscopic analysis, the predominant epilayer impurities were determined to be both carbon and silicon.


Related Articles

  • Improvements in the heteroepitaxy of GaAs on Si by incorporating a ZnSe buffer layer. Lee, M.K.; Horng, R.H.; Wuu, D.S.; Chen, P.C. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p207 

    Examines the heteroepitaxy of gallium arsenide (GaAs) on silicon with a zinc selenide interlayer by low-pressure metalorganic chemical vapor deposition. Electrical properties of GaAs epilayers; Reduction of surface dislocation density; Fabrication of planar Schottky diode.

  • Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility. Martin, M.; Moeyaert, J.; David, S.; Bassani, F.; Baron, T.; Alcotte, R.; Cipro, R.; Bogumilowicz, Y.; Ducroquet, F.; Sanchez, E.; Ye, Z.; Bao, X. Y.; Pin, J. B. // APL Materials;2016, Vol. 4 Issue 4, p1 

    Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase...

  • Si delta-doped layers of GaAs by low pressure metalorganic vapor phase epitaxy. Li, G.; Jagadish, C.; Clark, A.; Larsen, C. A.; Hauser, N. // Journal of Applied Physics;8/1/1993, Vol. 74 Issue 3, p2131 

    Focuses on the silicon delta-doped layers of gallium arsenide that were grown by low pressure metal organic vapor phase epitaxy. Effects of purge time, doping temperature and doping period on sheet carrier concentration of delta-doped layers; Mechanisms controlling the dopant confinement;...

  • Survey of defect-mediated recombination lifetimes in GaAs epilayers grown by different methods. Yablonovitch, E.; Bhat, R.; Harbison, J. P.; Logan, R. A. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1197 

    In GaAs double-heterostructure potential wells at moderate injection levels, surface, radiative, and Auger recombination can all be suppressed. This leaves only Shockley–Read–Hall recombination which is mediated by defects in the crystallographic structure. In a survey of...

  • Optimization of growth conditions for undoped and doped GaAs layers using an empirical model of metalorganic vapor phase epitaxy. Arbenin, D. E.; Burlyaeva, E. V.; Marmalyuk, A. A. // Inorganic Materials;Jan2010, Vol. 46 Issue 1, p1 

    We present semiempirical relations that quantify the influence of metalorganic vapor phase epitaxy (MOVPE) conditions on the parameters of GaAs-based epitaxial layers. These relations have been used to create a MOVPE training simulator system.

  • Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy. Yu, H. W.; Chang, E. Y.; Yamamoto, Y.; Tillack, B.; Wang, W. C.; Kuo, C. I.; Wong, Y. Y.; Nguyen, H. Q. // Applied Physics Letters;10/24/2011, Vol. 99 Issue 17, p171908 

    The growth of GaAs epitaxy on Ge/Si substrates with an arsenic prelayer grown with graded temperature ramped from 300 to 420 °C is investigated. It is demonstrated that the graded-temperature arsenic prelayer grown on a Ge/Si substrate annealed at 650 °C not only improves the surface...

  • Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure. Gocalinska, A.; Manganaro, M.; Pelucchi, E. // Applied Physics Letters;4/9/2012, Vol. 100 Issue 15, p152112 

    A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53% to 100%. The use of trimethylantimony (or its...

  • Improved AlxGa1-xAs bulk lasers with superlattice interfaces. Fischer, R.; Klem, J.; Drummond, T. J.; Kopp, W.; Morkoç, H.; Anderson, E.; Pion, M. // Applied Physics Letters;1984, Vol. 44 Issue 1, p1 

    A graded superlattice composed of AlxGa1-xAs and GaAs having a total thickness of 150 Ã… was incorporated on each side of the active layer of an otherwise standard double heterojunction laser. In spite of no optimization, current threshold densities as low as 600 A/cm2 at 880 nm were obtained...

  • Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth. Yunrui He; Jun Wang; Haiyang Hu; Qi Wang; Yongqing Huang; Xiaomin Ren // Applied Physics Letters;5/18/2015, Vol. 106 Issue 20, p1 

    The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 lm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics