Alternatives to arsine: The atmospheric pressure organometallic chemical vapor deposition growth of GaAs using triethylarsenic

Speckman, D. M.; Wendt, J. P.
March 1987
Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p676
Academic Journal
Studies on the homoepitaxial growth of unintentionally doped GaAs by atmospheric pressure organometallic chemical vapor deposition using triethylarsenic and trimethylgallium have been carried out, and the effects of growth temperature, V/III ratio, and flow rate on film characteristics are reported. Mirrorlike epitaxial layers of n-type GaAs were obtained at substrate temperatures of 540–650 °C and at V/III ratios of 6.7–11. The carrier concentrations for these films were approximately 1016–1017 cm-3, and from secondary ion mass spectroscopic analysis, the predominant epilayer impurities were determined to be both carbon and silicon.


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