Al/Si(100) Schottky barrier formation using nozzle jet beam deposition

Wong, J.; Mei, S-N.; Lu, T-M.
March 1987
Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p679
Academic Journal
High Schottky barrier height of [lowercase_phi_synonym]b=0.77 eV for Al/n-Si was obtained by the nozzle jet beam deposition method in a conventional vacuum condition without post-annealing. Previously, this high barrier height was only observable in the vacuum cleaved or sputter-etched samples in an ultrahigh vacuum condition. The Schottky barrier height was reduced if a partially ionized jet beam with 0.1% ions was used in the deposition process and if a bias of ≥0.5 kV was applied to the substrate. The reduction of the Schottky barrier height is attributed to the surface damage caused by the energetic ion bombardment. It is shown that a high barrier height ([bar_over_tilde:_approx._equal_to]0.8 eV) and a low leakage current were retained after a relatively low-temperature ([bar_over_tilde:_approx._equal_to]450 °C) annealing process if the applied bias was ≤1 kV.


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