Growth and properties of In-doped CdMnTe-CdTe superlattices

Bicknell, R. N.; Giles, N. C.; Schetzina, J. F.
March 1987
Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p691
Academic Journal
The first successful substitutional doping of dilute magnetic semiconductor superlattices composed of alternating layers of CdMnTe and CdTe is reported. These n-type In-doped multilayer structures were prepared using a new thin-film growth technique, photoassisted molecular beam epitaxy, in which the substrate is illuminated with visible light during the deposition process. The electrical, optical, and structural properties of the CdMnTe-CdTe superlattices are discussed.


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