TITLE

Universal relationship between resonant frequency and damping rate of 1.3 μm InGaAsP semiconductor lasers

AUTHOR(S)
Olshansky, R.; Hill, P.; Lanzisera, V.; Powazinik, W.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p653
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analysis of the measured frequency response of 1.3 μm InGaAsP vapor phase regrown buried heterostructure lasers shows that there is a universal linear relationship between damping rate and resonant frequency squared with a proportionality factor of 0.32×10-9 s. This result can be explained by the intraband relaxation model of nonlinear gain.
ACCESSION #
9822348

 

Related Articles

  • Structure and recombination in InGaAs/GaAs heterostructures. Fitzgerald, E. A.; Ast, D. G.; Kirchner, P. D.; Pettit, G. D.; Woodall, J. M. // Journal of Applied Physics;2/1/1988, Vol. 63 Issue 3, p693 

    Focuses on a study that investigated the structure and recombination in indium gallium arsenide/gallium arsenide heterostructures. Methodology; Results and discussion; Conclusions.

  • InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm. Maleev, N. A.; Zhukov, A. E.; Kovsh, A. R.; Egorov, A. Yu.; Ustinov, V. M.; Krestnikov, I. L.; Lunev, A. V.; Sakharov, A. V.; Volovik, B. V.; Ledentsov, N. N.; Kop’ev, P. S.; Alfërov, Zh. I.; Bimberg, D. // Semiconductors;May99, Vol. 33 Issue 5, p586 

    Semiconductor heterostructures with vertical optical cavities with active regions, based on arrays of InAs quantum dots inserted in an external InGaAs quantum well, have been obtained by molecular-beam epitaxy on GaAs substrates. The dependences of the reflection and photoluminescence spectra on...

  • Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on.... Wang, P.D.; Ledentsov, N.N. // Applied Physics Letters;3/21/1994, Vol. 64 Issue 12, p1526 

    Examines the optical properties of indium arsenide/gallium arsenide (InAs/GaAs) heterostructures with indium arsenide average layer thickness. Observation of high optical quality structures of indium arsenide; Attribution of the InAs growth improvement to GaAs surface; Exhibition of improved...

  • Persistent photoconductivity in InGaP/GaAs heterostructures. Fan, J.C.; Wang, J.C.; Chen, Y.F. // Applied Physics Letters;11/8/1999, Vol. 75 Issue 19, p2978 

    Investigates the photoconductivity in InGaP/GaAs heterostructures. Evidence that the separation of electrons and holes due to macroscopic potential barrier between the heterointerface and the substrate is the origin od the persistence photoconductivity effect; Reduction of the photoconductivity...

  • Photosensitivity of Heterostructures Based on Finely Ground Semiconductor Phases. Nikolaev, Yu. A.; Rud', V. Yu.; Rud', Yu. V.; Terukov, E. I.; Ushakova, T. N. // Semiconductors;Nov2005, Vol. 39 Issue 11, p1294 

    A new type of heterostructure is suggested and developed. The heterostructures are based on the direct contact of a bulk semiconductor with a dielectric layer in which a finely ground semiconductor phase is dispersed. In Si- and GaAs-based heterostructures of this type, rectification and...

  • Anomalous behavior of excitons at light holes in strained (In,Ga)As/GaAs heterostructures. Moumanis, Kh.; Seısyan, R. P.; Sasin, M. É.; Kavokin, A. V.; Kokhanovskiı, S. I.; Gibbs, H. M.; Khitrova, G. // Physics of the Solid State;May98, Vol. 40 Issue 5, p731 

    Additional localization of holes due to Coulomb attraction to the electron located in a quantum well is important for light-hole excitons in the heterostructure (In, Ga)As/GaAs. The fine structure of the optical and magneto-optical spectra of these quantum wells is examined in detail with the...

  • Capacitance-voltage study of heterostructures with InGaAs/GaAs quantum wells in the temperature range from 10 to 320 K. Petrovskaya, A. N.; Zubkov, V. I. // Semiconductors;Oct2009, Vol. 43 Issue 10, p1328 

    Heterostructures with single strained InGaAs/GaAs quantum wells have been studied by measuring the capacitance-voltage characteristics in a wide range of temperatures and test signal frequencies. Based on the analysis of experimental capacitance-voltage characteristics, a temperature shift of...

  • Temperature stability of photoluminescence in heterostructures with InGaAs/GaAs quantum well and Mn-delta-doped acceptor layer in GaAs barrier. Dorokhin, M. V.; Danilov, Yu. A.; Prokof'eva, M. M.; Sholina, A. E. // Technical Physics Letters;Sep2010, Vol. 36 Issue 9, p819 

    The temperature dependence of the electro- and photoluminescence of heterostructures with InGaAs/GaAs quantum well and a closely spaced manganese delta (δ)-doped layer in the GaAs barrier was investigated. It is found that the proposed heterostructures exhibit increased temperature stability...

  • Optical absorption and modulation behavior of strained InxGa1-xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy. Chen, Li; Rajkumar, K. C.; Madhukar, A. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2478 

    We report on the optical absorption and modulation characteristics of strained InxGa1-xAs/GaAs(0.1≤x≤0.25) multiple quantum well (MQW) structures grown on GaAs (100) substrates which also included regions of prepatterned mesas. Sharp excitonic features were realized in samples...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics