TITLE

Universal relationship between resonant frequency and damping rate of 1.3 μm InGaAsP semiconductor lasers

AUTHOR(S)
Olshansky, R.; Hill, P.; Lanzisera, V.; Powazinik, W.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p653
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Analysis of the measured frequency response of 1.3 μm InGaAsP vapor phase regrown buried heterostructure lasers shows that there is a universal linear relationship between damping rate and resonant frequency squared with a proportionality factor of 0.32×10-9 s. This result can be explained by the intraband relaxation model of nonlinear gain.
ACCESSION #
9822348

 

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