Universal relationship between resonant frequency and damping rate of 1.3 μm InGaAsP semiconductor lasers

Olshansky, R.; Hill, P.; Lanzisera, V.; Powazinik, W.
March 1987
Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p653
Academic Journal
Analysis of the measured frequency response of 1.3 μm InGaAsP vapor phase regrown buried heterostructure lasers shows that there is a universal linear relationship between damping rate and resonant frequency squared with a proportionality factor of 0.32×10-9 s. This result can be explained by the intraband relaxation model of nonlinear gain.


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