TITLE

# Response to â€˜â€˜Comment on â€˜Channeling radiation from strained-layer superlatticesâ€™ â€™â€™ [Appl. Phys. Lett. 50, 699 (1987)]

AUTHOR(S)
Pathak, Anand P.; Balagari, Prasanna K. John
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p699
SOURCE TYPE
DOC. TYPE
Article
ABSTRACT
Responds to comments on an article regarding radiation from strained-layer superlattices, published in a previous issue of 'Applied Physics Letters.' Employing the concept that the eigenvalues of the channeling positron change in strained-layer superlattices because the width of the channeling plane looks narrower than it is.
ACCESSION #
9822334

## Related Articles

• Optical Control of the Edge of the Band Gap of Semiconductor Layered Fabryâ€“Perot Type Structures. Gusyatnikov, V. N.; Nefedov, I. S. // Optics & Spectroscopy;Sep2000, Vol. 89 Issue 3, p418

A mechanism of controlling light is studied, which is based on the change of refractive indices of narrow-gap layers in a semiconductor layered periodic Fabry-Perot type structure (superlattice) caused by the contribution of nonequilibrium charge carriers produced by controlling radiation. By...

• Comment on â€˜â€˜Channeling radiation from strained-layer superlatticesâ€™â€™ [Appl. Phys. Lett. 48, 1075 (1986)]. Ikezi, H.; Lin-Liu, Y. R.; Ohkawa, T. // Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p699

Comments on an article on channeling radiation from strained layer superlattices, published in a previous issue of 'Applied Physics Letters.' Eigenvalues of channeling positrons in each layer of superlattices determined by the structure of the crystalline potential; Bending of crystal planes at...

• Frequency doubling and tripling of terahertz radiation in a GaAs/AlAs superlattice due to frequency modulation of Bloch oscillations. Winnerl, S.; Schomburg, E.; Brandl, S.; Kus, O.; Renk, K. F.; Wanke, M. C.; Allen, S. J.; Ignatov, A. A.; Ustinov, V.; Zhukov, A.; Kop'ev, P. S. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9

We report on frequency doubling and tripling of THz radiation in a voltage-biased GaAs/AlAs superlattice. By use of a corner cube antenna system, radiation from the Santa Barbara free-electron laser (frequency 0.7 THz) was guided into a superlattice mesa element and the second and third harmonic...

• Broadband semiconductor superlattice detector for THz radiation. Klappenberger, F.; Ignatov, A. A.; Winnerl, S.; Schomburg, E.; Wegscheider, W.; Renk, K. F.; Bichler, M. // Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1673

We report on a broadband GaAs/AlAs superlattice detector for THz radiation; a THz field reduces the current through a superlattice, which is carried by miniband electrons, due to modulation of the Bloch oscillations of the miniband electrons. We studied the detector response, by use of a free...

• Intersubband transitions in GaAs-AlxGa1-xAs modulation-doped superlattices. Nakayama, M.; Kuwahara, H.; Kato, H.; Kubota, K. // Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1741

We have investigated infrared absorptions between electron subbands in GaAs-AlxGa1-xAs modulation-doped superlattices with constant layer thicknesses (70 Ã… for the GaAs layer and 180 Ã… for the AlxGa1-xAs layer) and a wide Al concentration range from 0.3 to 0.7. Sharp resonance...

• Sequential tunneling current through semiconductor superlattices under intense THz radiation. Platero, Gloria; Aguado, Ramon // Applied Physics Letters;6/30/1997, Vol. 70 Issue 26, p3546

Presents transport measurements in gallium arsenide-gallium aluminum arsenide superlattices under terahertz radiation. Evidence of dynamical localization and electron pumping in the opposite direction; Inducement of absorption and emission processes by the alternating current field; Evaluation...

• Effect of UV Irradiation on the Kinetics of Annealing-Induced Phase Transformations in Ti/Si, V/Si, and Zr/Si Heterostructures. Nuprienok, I. S.; Shibko, A. N. // Inorganic Materials;Nov2003, Vol. 39 Issue 11, p1154

The effect of irradiation at Î» = 312.5, 365.0, and 552.0 nm on annealing-induced phase transformations and electrical properties of Ti/Si, V/Si, and Zr/Si heterostructures is studied. The results demonstrate that irradiation at these wavelengths during annealing offers the possibility of...

• Electrical Properties of Ag/Tlâ€“Baâ€“Caâ€“CuO/CdSe Heterostructures. Shirage, P. M.; Shivagan, D. D.; Pawar, S. H. // Journal of Superconductivity & Novel Magnetism;Jul2009, Vol. 22 Issue 5, p455

Tl2Ba2Ca2Cu3O $_{1\tilde{0}}$ superconducting films are electrochemically deposited onto Ag-substrate followed by the semiconducting CdSe. The metalâ€“superconducting-semiconductor heterostructure has been imprinted and the electrical properties of the junctions implied have been analyzed...

• Surface-Photovoltage Effect in a GaAsâ€“GaAsP Superlattice Studied with Combination of Synchrotron Radiation and the Laser. Tanaka, Senku; Moré, Sam D.; Takahashi, Kazutoshi; Kamada, Masao; Nishitani, Tomohiro; Nakanishi, Tsutomu // Surface Review & Letters;Apr2002, Vol. 9 Issue 2, p1297

Core-level photoelectron spectroscopy with the combination of synchrotron radiation (SR) and a laser was used for exploring the surface-photovoltage (SPV) effect and its temporal profiles in a GaAsGaAsP superlattice (SL). It was observed that the SPV value in the SL is suppressed as compared...

Share