Chemical effects in ion mixing of a ternary system (metal-SiO2)

Banwell, T.; Nicolet, M-A.; Sands, T.; Grunthaner, P. J.
March 1987
Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p571
Academic Journal
The mixing of Ti, Cr, and Ni thin films with SiO2 by low-temperature (-196–25 °C) irradiation with 290 keV Xe has been investigated. Comparison of the morphology of the intermixed region and the dose dependences of net metal transport into SiO2 reveals that long range motion and phase formation probably occur as separate and sequential processes. Kinetic limitations suppress chemical effects in these systems during the initial transport process. Chemical interactions influence the subsequent phase formation.


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