TITLE

Formation of submicron epitaxial islands of Pd2Si on silicon

AUTHOR(S)
Boothroyd, C. B.; Stobbs, W. M.; Tu, K. N.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p577
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It has been found that annealing Pd-Er deposits on a (001) silicon surface results in the formation of isolated submicron islands of Pd2Si with two epitaxially oriented habits. By contrast, when Pd is annealed on a (111) silicon substrate, Pd2Si is formed with full coverage and a specific epitaxy.
ACCESSION #
9822316

 

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