Fast P-doped silicon bolometer for detecting heat pulses

Boragno, C.; Valbusa, U.; Pignatel, G.
March 1987
Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p583
Academic Journal
A new detector of ballistic phonons is presented. It is a P-doped Si bolometer realized on top of a (100)Si crystal by ion implantation. The open circuit responsivity of the bolometer is 8000 V/W and the response time less than 50 ns. Time-resolved spectra of ballistic phonons propagating in the same Si crystal along the <100> direction are reported.


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