Determination of spatial potential fluctuations in Si and GaAs inversion layers by weak localization

Mensz, P. M.; Wheeler, R. G.; Foxon, C. T.; Harris, J. J.
March 1987
Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p603
Academic Journal
Drawing upon our current understanding of the weak localization correction to the Drüde conductivity in quasi-two-dimensional systems, a method of measuring the random motion of charge carriers perpendicular to the plane of the quantum confinement is demonstrated. This technique has been applied to silicon inversion layers and a GaAs heterojunction to determine, with subangstrom resolution, the mean fluctuation of the average perpendicular position of the electron wave function during transport parallel to the potential barrier.


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