TITLE

Electronic properties of In0.53Ga0.47As-InP single quantum wells grown by chemical beam epitaxy

AUTHOR(S)
Frei, Michel; Tsui, D. C.; Tsang, W. T.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p606
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In0.53Ga0.47As-InP single quantum well (SQW) structures grown by chemical beam epitaxy (CBE) were studied using low-field magnetotransport, the quantum Hall effect, and far-infrared cyclotron resonance measurements at 4.2 K. We compare results on the two-dimensional electron gas (2DEG) in the SQW’s and the single interface heterojunctions. These results confirm the high quality of the material grown by CBE and demonstrate conclusively that the use of the SQW’s for 2DEG confinement can effectively eliminate the parallel conduction often present in single interface structures.
ACCESSION #
9822298

 

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