Index-guided AlxGa1-xAs-GaAs quantum well heterostructure lasers fabricated by vacancy-enhanced impurity-induced layer disordering from an internal (Si2)y(GaAs)1-y source

Guido, L. J.; Jackson, G. S.; Plano, W. E.; Hsieh, K. C.; Holonyak, N.; Burnham, R. D.; Epler, J. E.; Thornton, R. L.; Paoli, T. L.
March 1987
Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p609
Academic Journal
A unique form of Si impurity-induced layer disordering (Si IILD) is described that utilizes a ‘‘buried’’ Si source, a (Si2)y(GaAs)1-y barrier, and a patterned external source of column III vacancies, an SiO2 cap, to define the layer disordering. This form of Si IILD is used to fabricate stripe-geometry index-guided laser diodes that are capable of kink-free single-mode operation.


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