TITLE

Optical properties of AlxIn1-xP grown by organometallic vapor phase epitaxy

AUTHOR(S)
Bour, D. P.; Shealy, J. R.; Wicks, G. W.; Schaff, W. J.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p615
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
AlxIn1-xP epilayers grown by organometallic vapor phase epitaxy are characterized by electroreflectance, photoluminescence, and Raman spectroscopy. Electroreflectance measurements of the E0 band gap show significant bowing of the direct band gap with composition. The compositional dependence of the direct gap is found to be EΓ(x)=1.35+1.83x+0.38x2 (eV). In the Raman scattering spectrum, the AlP-like longitudinal optical phonon mode is identified and its energy is measured as a function of composition.
ACCESSION #
9822292

 

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