TITLE

Influence of boron on tin induced interdiffusion in GaAs-Ga0.72Al0.28As superlattices

AUTHOR(S)
Rao, E. V. K.; Ossart, P.; Alexandre, F.; Thibierge, H.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p588
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
By performing different annealing treatments on variously tin-doped molecular beam epitaxially grown GaAs-Ga0.72Al0.28As quantum well structures, we show here the following: (i) tin, like other donor atoms silicon and sulfur, also induces disordering by enhancing interdiffusion coefficients, and (ii) a voluntary introduction of boron atoms in a tin-doped structure prior to annealing leads to a retardation in tin enhanced interdiffusion.
ACCESSION #
9822273

 

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