Influence of boron on tin induced interdiffusion in GaAs-Ga0.72Al0.28As superlattices

Rao, E. V. K.; Ossart, P.; Alexandre, F.; Thibierge, H.
March 1987
Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p588
Academic Journal
By performing different annealing treatments on variously tin-doped molecular beam epitaxially grown GaAs-Ga0.72Al0.28As quantum well structures, we show here the following: (i) tin, like other donor atoms silicon and sulfur, also induces disordering by enhancing interdiffusion coefficients, and (ii) a voluntary introduction of boron atoms in a tin-doped structure prior to annealing leads to a retardation in tin enhanced interdiffusion.


Related Articles

  • Application of superlattices to the investigation of resonant defect in GaAs layers. Feng, S.L.; Zhou, J. // Applied Physics Letters;4/24/1995, Vol. 66 Issue 17, p2256 

    Describes the application of superlattices to detect resonant electron irradiation-induced deep level defects in gallium arsenide (GaAs) semiconductor layers. Characterization of defects by deep level transient spectroscopy; Effect of miniband formation in superlattice on band gap; Metastatic...

  • Temperature dependence of the electronic coherence of GaAs-GaAlAs superlattices. Mendez, E. E.; Agulló-Rueda, F.; Hong, J. M. // Applied Physics Letters;6/18/1990, Vol. 56 Issue 25, p2545 

    We have shown that the coherence length of electrons in a 55-Å-period GaAs-GaAlAs superlattice does not depend strongly on temperature in the range 5–292 K, varying from 17 periods at 5 K to a minimum of nine periods at room temperature. The quantum coherence was determined by...

  • Wannier–Stark localization in a strained InGaAs/GaAs superlattice. Pezeshki, B.; Thomas, D.; Harris, J. S. // Applied Physics Letters;11/12/1990, Vol. 57 Issue 20, p2116 

    We report the first room-temperature observation of Wannier–Stark localization in a strained InGaAs/GaAs superlattice. The localization effects are in close agreement to theory. At low electric fields, the room-temperature absorption data show a small Wannier exciton peak at the lower...

  • Characterization of AlAs/GaAs superlattice barriers using electrical barrier height analysis. Paulus, M. J.; Huang, C. I.; Bozada, C. A.; Cheney, M. E.; Dudley, S. C.; Stutz, C. E.; Evans, K. R.; Jones, R. L. // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4765 

    Presents a study that investigated the characteristics of aluminum arsenide/gallium arsenide superlattice barriers using electrical barrier height analysis. Methodology; Determination of the superlattice barrier layer thickness; Comparison of the superlattice barrier of gallium arsenide and...

  • Calculation of the Low-Field Mobility of Quasi-Two-Dimensional Electrons in a GaAs/Al[sub 0.36]Ga[sub 0.64]As Superlattice at Temperatures in the Region of 77 K. Borisenko, S. I. // Semiconductors;Jul2002, Vol. 36 Issue 7, p808 

    The longitudinal and transverse mobilities of quasi-two-dimensional electrons in a GaAs/Al[sub 0.36]Ga[sub 0.64]As superlattice was calculated in the region of the liquid-nitrogen temperature and in the electron-concentration range from 10[sup 13] to 10[sup 15] cm[sup -3]. Scattering of...

  • Growth of single-crystal metastable (GaAs)1-x(Si2)x alloys on GaAs and (GaAs)1-x(Si2)x/GaAs strained-layer superlattices. Mei, D. H.; Kim, Y.-W.; Lubben, D.; Robertson, I. M.; Greene, J. E. // Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2649 

    Epitaxial zinc blende structure metastable (GaAs)1-x(Si2)x alloys have been grown with 0

  • Ferromagnetism and interlayer exchange coupling in short-period (Ga,Mn)As/GaAs superlattices. Mathieu, R.; Svedlindh, P.; Sadowski, J.; Swiatek, K.; Karlsteen, M.; Kanski, J.; Ilver, L. // Applied Physics Letters;10/14/2002, Vol. 81 Issue 16, p3013 

    Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of nonmagnetic GaAs spacer. The short-period Ga[sub 0.93]Mn[sub 0.07]As/GaAs superlattices exhibit a paramagnetic-to-ferromagnetic phase transition...

  • Sputtered SiNx film for self-aligned Si-Zn diffusion into GaAs and AlGaAs. Zou, W. X.; Boudreau, R.; Han, H. T.; Bowen, T.; Shi, Song Stone; Mui, D. S. L.; Merz, J. L. // Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6244 

    Presents a study which described the use of sputtered silicon nitride film for self-aligned silicon-zinc diffusion into gallium arsenide and aluminum gallium arsenide semiconductors. Theoretical background on silicon and zinc diffusions; Experimental methods; Results and discussion.

  • Photocurrent resonances in short-period AlAs/GaAs superlattices in an electric field. Al’perovich, V. L.; Terekhov, A. S.; Tkachenko, V. A.; Tkachenko, O. A.; Moshegov, N. T.; Toropov, A. I.; Yaroshevich, A. S. // Physics of the Solid State;Jan99, Vol. 41 Issue 1, p143 

    The photocurrent was measured as a function of the external electric field in short-period AlAs/ GaAs superlattices for various photon energies. Transport resonances, whose positions do not depend on the photon energy, were observed in these dependences together with optical resonances due to...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics