X-ray photoelectron spectroscopy study of Schottky barrier formation and thermal stability of the LaB6/GaAs(001) c (4×4) interface

Yokotsuka, Tatsuo; Narusawa, Tadashi; Uchida, Yoko; Nakashima, Hisao
March 1987
Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p591
Academic Journal
Schottky barrier formation and thermal stability of the LaB6/GaAs(001) c (4×4) interface were investigated by x-ray photoelectron spectroscopy. Results show an excellent thermal stability without any appreciable interface reactions such as interdiffusion. Band bending induced by LaB6 deposition is found to depend on the evaporation condition. However, the Fermi level pinning position does not change due to heat treatments between 300 and 700 °C. This indicates that LaB6 is a promising gate material for GaAs integrated circuits.


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