Hg1-xMnxTe-CdTe superlattices grown by molecular beam epitaxy

Chu, X.; Sivananthan, S.; Faurie, J. P.
March 1987
Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p597
Academic Journal
Molecular beam epitaxial growth of Hg1-xMnxTe-CdTe superlattices is reported here for the first time. They have been characterized by electron and x-ray diffraction, infrared transmission, and Hall measurements. The presence of satellite peaks in the x-ray spectra shows that Hg1-xMnxTe-CdTe superlattices have narrower band gaps than the equivalent quaternary Hg1-x-yMnxCdyTe. These superlattices exhibit a band-gap energy in the 0.1–0.3 eV range, demonstrating that they are a new infrared material. All these superlattices are n type even though their HgMnTe layers have been grown to be p type. Thus the type III-type I superlattice transition could not be investigated for hole mobility.


Related Articles

  • Molecular beam epitaxial growth and characterization of a novel superlattice system: Hg1-xCdxTe-CdTe. Reno, J.; Sou, I. K.; Wijewarnasuriya, P. S.; Faurie, J. P. // Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1069 

    Hg1-xCdxTe-CdTe superlattices of both type I and type III have been grown for the first time using the molecular beam epitaxy technique. The superlattices were grown at 190 °C. They have been characterized by electron and x-ray diffraction, infrared transmission, and Hall measurements. The...

  • p-type modulation-doped HgCdTe. Han, Jeong W.; Hwang, S.; Lansari, Y.; Harper, R. L.; Yang, Z.; Giles, N. C.; Cook, J. W.; Schetzina, J. F.; Sen, S. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p63 

    At North Carolina State University, we have recently employed photoassisted molecular beam epitaxy to successfully prepare p-type modulation-doped HgCdTe. The modulation-doped HgCdTe samples were grown on lattice-matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research...

  • Charge-carrier lifetime in Hg[sub 1-x]Cd[sub x]Te (x=0.22) structures grown by molecular-beam epitaxy. Voıtsekhovskiı, A. V.; Denisov, Yu. A.; Kokhanenko, A. P.; Varavin, V. S.; Dvoretskiı, S. A.; Liberman, V. T.; Mikhailov, N. N.; Sidorov, Yu. G. // Semiconductors;Jul97, Vol. 31 Issue 7, p655 

    Measurements of the charge carrier lifetime in epitaxial structures based on narrow-gap Hg[sub 1 - x]Cd[sub x]Te (x = 0.22), grown by molecular-beam epitaxy with pulsed excitation using radiation at different wavelengths, are reported. It is shown that in p-type epitaxial films the lifetime is...

  • Spontaneous growth of coherent tilted superlattice on vicinal (100) GaAs substrates. Tsuchiya, M.; Petroff, P. M.; Coldren, L. A. // Applied Physics Letters;4/24/1989, Vol. 54 Issue 17, p1690 

    Periodic Al composition modulations have been observed to occur spontaneously during molecular beam epitaxy of AlGaAs on vicinal (100) substrates. The formation of the spontaneous Al modulation requires (a) the migration-enhanced epitaxy deposition and (b) one monolayer deposition of Al and Ga...

  • Growth temperature dependence of biquadratic coupling in Fe/Cr(100) superlattices studied by polarized neutron reflectivity and x-ray diffraction (abstract). Schäfer, M.; Wolf, J. A.; Grünberg, P.; Ankner, J. F.; Schreyer, A.; Zabel, H.; Majkrzak, C. F. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p6193 

    Presents an abstract of a study that measured the polarized neutron specular reflectivity of superlattices of nominal composition grown by molecular beam epitaxy.

  • Spectroscopic ellipsometry for characterization of InAs/Ga1-xInxSb superlattices. Wagner, J.; Schmitz, J.; Herres, N.; Fuchs, F.; Walther, M. // Journal of Applied Physics;5/15/1998, Vol. 83 Issue 10, p5452 

    Provides information on an experiment measuring the pseudodielectric function of InAs/Ga1-xInxSb superlattices (SLs) grown by solid-source molecular-beam epitaxy. Methodology used to conduct the experiment; Indepth look at spectroscopic ellipsometry (SE); Results of study.

  • Dependence of Al layer growth mode on Cr underlayer thickness in molecular-beam epitaxy of (001) Al/Cr superlattices. Kingetsu, Toshiki // Journal of Applied Physics;8/15/2000, Vol. 88 Issue 4, p1838 

    Investigates the dependence of aluminum (Al) layer growth on chromium (Cr) underlayer thickness in molecular beam epitaxy of Al/Cr superlattices. Use of in situ reflection high-energy electron and ex situ X-ray diffraction analysis; Dependence of epitaxy on Cr underlayer thickness; Stability of...

  • The growth and structure of short period (001) Hg1-xCdxTe-HgTe superlattices. Becker, C. R.; He, L.; Regnet, M. M.; Kraus, M. M.; Wu, Y. S.; Landwehr, G.; Zhang, X. F.; Zhang, H. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2486 

    Presents information on a study which investigated the molecular beam epitaxially grown short period (001) Hg[sub1-x]Cd[subx]Te-HgTe superlattices. Advantage of the superlattices in infrared applications compared to the alloy; Experimental and theoretical details; Results and discussion;...

  • High-field domain formation in GaAs/AlGaAs superlattices. Han, Z.Y.; Yoon, S.F. // Applied Physics Letters;2/27/1995, Vol. 66 Issue 9, p1120 

    Verifies the formation of high-field domains in a gallium arsenide/aluminum gallium arsenide semiconductor superlattice. Growth of identical barrier width through molecular beam epitaxy; Location of the first formation of the high-field domain; Discussion on the electron tunneling process.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics