Hg1-xMnxTe-CdTe superlattices grown by molecular beam epitaxy

Chu, X.; Sivananthan, S.; Faurie, J. P.
March 1987
Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p597
Academic Journal
Molecular beam epitaxial growth of Hg1-xMnxTe-CdTe superlattices is reported here for the first time. They have been characterized by electron and x-ray diffraction, infrared transmission, and Hall measurements. The presence of satellite peaks in the x-ray spectra shows that Hg1-xMnxTe-CdTe superlattices have narrower band gaps than the equivalent quaternary Hg1-x-yMnxCdyTe. These superlattices exhibit a band-gap energy in the 0.1–0.3 eV range, demonstrating that they are a new infrared material. All these superlattices are n type even though their HgMnTe layers have been grown to be p type. Thus the type III-type I superlattice transition could not be investigated for hole mobility.


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