Observations of β-tungsten deposited by low pressure chemical vapor deposition

Paine, D. C.; Bravman, J. C.; Yang, C. Y.
March 1987
Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p498
Academic Journal
Metastable β-tungsten was identified, using transmission electron microscopy, in arrays of low pressure chemical vapor deposited contacts on patterned silicon wafers. In contrast, only α-tungsten was found in films deposited onto bare silicon wafers under identical conditions. Thus, we have shown that contact wells etched through oxide can play a role in determining which tungsten phase is deposited by low pressure chemical vapor deposition. This effect was observed for a variety of furnace conditions (T=300–330 °C, H2/WF6=150:1–400:1). Transmission electron micrographs and selected area diffraction patterns are presented which illustrate the microstructural differences between the α- and β-tungsten phases. Possible sources of oxygen or fluorine, impurities which are believed to stabilize β-tungsten, are discussed and related to the geometry of the vias cut through oxide on patterned wafers.


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