Interaction of hydrogen and thermal donor defects in silicon

Chantre, A.; Pearton, S. J.; Kimerling, L. C.; Cummings, K. D.; Dautremont-Smith, W. C.
March 1987
Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p513
Academic Journal
We have studied the interaction of hydrogen with thermal donors in silicon using transient capacitance and current spectroscopy. We find that a large degree of thermal donor passivation (a factor of 40) can be achieved by hydrogen plasma exposure at 120 °C. The residual electrical activity is shown to arise from perturbed E(0.07) and E(0.15) donor states. Annealing at 200 °C almost completely reactivates the low concentration of thermal donors present in these samples. A model involving different incorporation sites for hydrogen is proposed to explain the results.


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