TITLE

Mechanism of compensation in heavily silicon-doped gallium arsenide grown by molecular beam epitaxy

AUTHOR(S)
Maguire, J.; Murray, R.; Newman, R. C.; Beall, R. B.; Harris, J. J.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p516
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silicon-doped GaAs grown by molecular beam epitaxy has been characterized by Hall measurements, infrared local vibrational mode (LVM) absorption, secondary ion and laser source mass spectroscopy. Highly doped samples with [Si]∼3×1019 cm-3 show only a low carrier concentration of 8×1017 cm-3. LVM spectroscopy shows that SiGa donors are compensated predominantly by [Si-X] complexes, where X has been assigned previously to a gallium vacancy (VGa). Other compensating impurities are not present in the layers at significant concentrations.
ACCESSION #
9822240

 

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