TITLE

Effect of rapid thermal annealing for the compositional disordering of Si-implanted AlGaAs/GaAs superlattices

AUTHOR(S)
Kobayashi, Junji; Fukunaga, Toshiaki; Ishida, Koichi; Nakashima, Hisao; Flood, Jane D.; Bahir, Gad; Merz, James L.
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p519
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the effect of rapid thermal annealing (RTA) for the compositional disordering of Si-implanted AlGaAs/GaAs superlattices (SL) in comparison with that of furnace annealing (FA). By using RTA (970 °C, 10 s), the implantation damage can be eliminated without disordering the SL, while the disordering occurs when FA (850 °C, 30 min) is used. Secondary ion mass spectrometry analyses show that the difference between RTA and FA is due to the extent of Si diffusion into the AlGaAs/GaAs SL.
ACCESSION #
9822236

 

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