Synchrotron-radiation-induced surface nitridation of silicon at room temperature

Cerrina, F.; Lai, B.; Wells, G. M.; Wiley, J. R.; Kilday, D. G.; Margaritondo, G.
March 1987
Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p533
Academic Journal
We demonstrate that unmonochromatized synchrotron radiation stimulates the formation of surface-reacted nitride species on silicon at room temperature. The experimental evidence was obtained by exposing a NH3-covered Si(111) surface to synchrotron radiation. This class of phenomena is relevant for the manufacturing technology of submicron electronic devices.


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