TITLE

Quantum well surface-plasmon oscillator

AUTHOR(S)
Palmer, A. Jay
PUB. DATE
March 1987
SOURCE
Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p537
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We identify a new type of electromagnetic oscillator which utilizes the negative differential conductivity of a quantum well tunnel junction to drive surface-plasmon oscillations on the outside boundaries of the junction. We calculate the complex propagation constant as a function of frequency for the antisymmetric gap-mode surface plasmon on a state of the art GaAs/AlGaAs double-barrier tunnel junction. The surface-plasmon gain coefficient is found to be positive for frequencies up to 5 GHz. Single-mode oscillation of the surface plasmon at frequencies near 5 GHz is predicted on a tunnel junction with a lateral dimension equal to about 150 μm.
ACCESSION #
9822223

 

Related Articles

  • Effect of low-temperature charge redistributions on the conductivity of surface electron channels at the Si / SiO[sub 2] interface. Bochkareva, N. I.; Khorev, S. A. // Semiconductors;Nov99, Vol. 33 Issue 11, p1212 

    The behavior of the electron density at the Si/SiO[sub 2] interface with temperature is investigated by measuring the rf conductivity of band-edge surface electronic channels that shunt Schottky barriers in n-type Si. The results are explained within a model in which the "metallic" character of...

  • Does luminescence show semiconductor interfaces to be atomically smooth? Warwick, C. A.; Jan, W. Y.; Ourmazd, A.; Harris, T. D. // Applied Physics Letters;6/25/1990, Vol. 56 Issue 26, p2666 

    Luminescence spectra from quantum wells are routinely interpreted in terms of atomically smooth and atomically abrupt interfaces. Here we show that this interpretation is inconsistent with photoluminescence, photoluminescence excitation, and quantitative microscopic (chemical lattice imaging)...

  • Application of position sensitive atom probe to the study of the microchemistry and morphology of quantum well interfaces. Liddle, J. A.; Norman, A. G.; Cerezo, A.; Grovenor, C. R. M. // Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1555 

    The morphology and microchemistry of interfaces in GaInAs/InP quantum well structures have been studied with extremely high resolution by the new technique of position sensitive atom probe microanalysis. This letter presents some preliminary results demonstrating the power of the technique in...

  • Band structure and confined energy levels of the Si3N4/Si/GaAs system. Chen, Z.; Mohammad, S.N. // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p275 

    Calculates the band structure of strained silicon on (001) GaAs, band lineups of the strained Si/(001)GaAs heterojunction, and confined energy levels of the Si3N4/Si/GaAs quantum well. Band structure of coherently strained silicon on (001) GaAs; Band line ups for the strained silicon GaAs...

  • Longitudinal size effect on conductivity in double quantum wells. Vasko, F.T. // Applied Physics Letters;1/15/1996, Vol. 68 Issue 3, p412 

    Examines the dependence of longitudinal conductivity on the length of double quantum wells (DQW). Relevance of the size effect to nonresonant tunnel coupling; Determination of current density distribution in DQW; Comparison between longitudinal and transverse conductivities.

  • A comparison using a delta-function model of envelope function approximations for quantum wells. Cunningham, Thomas; Barker, R. C.; Chiu, L. C. // Journal of Applied Physics;6/1/1988, Vol. 63 Issue 11, p5393 

    Presents a study which compared versions of the effective-mass approximation to the exact atomic wave function in predicting the energies of the bound states in a single quantum well. Details on studies of bound states in thin heterojunction quantum wells; Properties of a delta-function...

  • Electron-hole transition energies and atomic steps at the interfaces of thin InGaAs/InP quantum wells. Zachau, M.; Grützmacher, D. // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p632 

    We measure the absorption of thin InGaAs/InP quantum wells with a well width between 0 and 20 Ã…. The discretization of the transition energies due to the quantization of the well width by monolayers is clearly observed for both the heavy and light hole excitons. The dependences of the heavy...

  • Quantum well tunnel triode. Kastalsky, A.; Milshtein, M. // Applied Physics Letters;2/1/1988, Vol. 52 Issue 5, p398 

    We demonstrate a novel three-terminal device, the tunnel triode, in which the current within the quantum well is a part of the tunnel current through the p+-n+ junction. A tunnel-diode-like negative differential resistance effect with peak-to-valley ratio as high as 20 was observed, the tunnel...

  • Effect of growth temperature on the electric properties of In...Ga...As/GaAs p-i-n multiple-quantum-well diodes. Chen, J. F.; Wang, P. Y. // Journal of Applied Physics;6/1/2000, Vol. 87 Issue 11, p8074 

    Presents a study which investigated the electric properties of multiple-quantum-well diodes. Experimental procedures; Results and discussion; Conclusion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics