Field-assisted bonding below 200 °C using metal and glass thin-film interlayers

Lee, W. Y.; Sequeda, F.; Salem, J.; Chapman, D.
March 1987
Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p522
Academic Journal
Bonding between similar or dissimilar surfaces with metal and glass thin-film interlayers as well as bulk glass plates using an electric field assisted bonding technique at 160 °C or less is described. This low-temperature field-assisted bonding is achieved using, e.g., few μm thick glass films rf magnetron sputter deposited from Na or Li silicate glasses, and 0.05–1.0 μm thick Al, Sn, Mg, and Hf films. The bond strength thus achieved is found to be greater than the cohesive strength of the glass used. Results from x-ray photoelectron spectroscopy analyses confirm the migration across the glass layer and the plating out on the cathode surfaces of mobile ions such as Na+ or Li+ during field-assisted bonding. The migration and plating out of mobile ions can be detected in 10 s after the potential is applied and whether actual bonding between the metal and glass occurs or not. The possible bonding mechanism based on these XPS results is proposed.


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