Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gate

Raulin, J. Y.; Thorngren, E.; di Forte-Poisson, M. A.; Razeghi, M.; Colomer, G.
March 1987
Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p535
Academic Journal
A very high transconductance (260 mS/mm) has been achieved for the first time with an InGaAs/InP junction field-effect transistor. The transistor was fabricated using a chemical etching technique which allowed the fabrication of submicrometer gate (0.5 μm). Very low values of access resistance were obtained using a self-aligned technology.


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