TITLE

Stimulated emission of photoexcited GaAs/AlxGa1-xAs single quantum wells

AUTHOR(S)
Borenstain, S.; Fekete, D.; Vofsi, M.; Sarfaty, R.; Cohen, E.; Ron, Arza
PUB. DATE
February 1987
SOURCE
Applied Physics Letters;2/23/1987, Vol. 50 Issue 8, p442
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The optical gain of narrow, single quantum well GaAs/AlxGa1-xAs structures is measured by the variable illuminated stripe length method at low temperatures. Stimulated emission (SE) is observed only from the lowest states of the electron-hole plasma (EHP) excited in the well and from the cladding layers. In contrast to the case of bulk AlxGa1-xAs, the SE spectrum is independent of either excitation intensity or stripe length. The high e-h pair density in the quantum well results in higher gain values (per unit excited volume) than those observed in bulk AlxGa1-xAs under similar photoexcitation conditions.
ACCESSION #
9822187

 

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