Improved activation of Mg+ and As+ dual implants in GaAs by capless rapid thermal annealing

Masum Choudhury, A. N. M.; Armiento, C. A.
February 1987
Applied Physics Letters;2/23/1987, Vol. 50 Issue 8, p448
Academic Journal
The activation of high dose Mg+ implants (1×1015 cm-2, 100 keV) in GaAs using capless rapid thermal annealing has been improved by the co-implantation of As+. This technique reduces the outdiffusion of the implanted Mg, which can adversely affect the activation of shallow, high dose implants. Compared with an activation of 18% for an implant of Mg+ only, the co-implantation of As+ has increased the activation to as much as 61% with concomitant sheet resistance of 136 Ω/[Laplacian_variant]. The placement of the As+ implant with respect to the position of the Mg+ profile has been determined to play a role in the activation efficiency. This technique has been applied to the formation of thick p+ regions with high surface carrier concentrations, which has important applications in device fabrication for reduction of contact resistances.


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