Carrier lifetime versus ion-implantation dose in silicon on sapphire

Doany, F. E.; Grischkowsky, D.; Chi, C.-C.
February 1987
Applied Physics Letters;2/23/1987, Vol. 50 Issue 8, p460
Academic Journal
We have measured the dependence of the free-carrier lifetime on O+ ion-implantation dose in silicon-on-sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3×1014 cm-2 the measured carrier lifetime reached a limit of 600 fs.


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