Oxygen removal from Si via reaction with adsorbed Ge

Morar, J. F.; Meyerson, B. S.; Karlsson, U. O.; Himpsel, F. J.; McFeely, F. R.; Rieger, D.; Taleb-Ibrahimi, A.; Yarmoff, J. A.
February 1987
Applied Physics Letters;2/23/1987, Vol. 50 Issue 8, p463
Academic Journal
Silicon surface optimization prior to film growth is central to the fields of chemical vapor deposition and molecular beam epitaxy. We have examined a method for low-temperature in situ cleaning of the Si (100) surfaces utilizing a submonolayer coverage of germanium. Synchrotron excited x-ray photoemission data indicate that Ge atoms arriving at a Si (100) surface can break silicon–oxygen bonds, thereby producing new chemical species which sublimate at 625 °C. In the absence of Ge, the observed silicon oxide species were stable at temperatures well in excess of 750 °C. These results are used to investigate the mechanisms by which adsorbed Ge can be used to produce oxide-free Si (100) surfaces at 625 °C.


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