Glow-discharge-implanted, thermally annealed, oxide-passivated silicon solar cells of 19% efficiency

Westbrook, R. D.; Wood, R. F.; Jellison, G. E.
February 1987
Applied Physics Letters;2/23/1987, Vol. 50 Issue 8, p469
Academic Journal
Single-crystal silicon solar cells with efficiencies as high as 19.3% AM1.5 have been fabricated using simple, glow-discharge ion implantation followed by conventional furnace annealing during which an oxide layer was grown for surface passivation. Fine-line (∼5 μm) photolithography was used for metallization to reduce carrier recombination at the metal-silicon interface and optimized ZnS/MgF2 antireflection coatings were applied. The efficiencies of these cells are the highest reported to date for ion-implanted cells.


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