Rapid direct writing of high-aspect-ratio trenches in silicon

Treyz, G. V.; Beach, R.; Osgood, R. M.
February 1987
Applied Physics Letters;2/23/1987, Vol. 50 Issue 8, p475
Academic Journal
Deep trenches have been etched in crystalline silicon with polarization-controlled, variable curvature walls. Scan speeds of up to 10 mm/s have been demonstrated. A qualitative understanding of the etching process has been developed which is based on a local, melt-enhanced etch rate.


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