TITLE

Surface reaction and recombination of the SiH3 radical on hydrogenated amorphous silicon

AUTHOR(S)
Perrin, Jérôme; Broekhuizen, Ton
PUB. DATE
February 1987
SOURCE
Applied Physics Letters;2/23/1987, Vol. 50 Issue 8, p433
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Mercury photosensitized decomposition of SiH4 is used to study surface reactions of SiH3 on hydrogenated amorphous silicon (a-Si:H). The method involves modeling of gas phase production, reaction and diffusion to the walls of reactive species, in a parallel plate reactor, combined with measurements of surface reflection coefficient of SiH3, spatial density profile of SiH3, and a-Si:H deposition rate. The reaction probability of SiH3 on a-Si:H varies from 0.1 up to 0.2 in the 40–350 °C temperature domain. However, a large fraction (≥60%) of adsorbed SiH3 recombine on the surface, instead of being incorporated in the film.
ACCESSION #
9822159

 

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