Modulation of Renninger scan intensity: A new x-ray technique to characterize epitaxial structures

Greenberg, B.; Ladell, J.
February 1987
Applied Physics Letters;2/23/1987, Vol. 50 Issue 8, p436
Academic Journal
We have demonstrated a new x-ray diffraction technique to characterize epitaxial structures. It makes use of Renninger scans [Z. Phys. 106, 141–176 (1937)] in which a crystal is rotated about the normal to a set of diffracting planes while diffraction from those planes is measured. To obtain these scans an x-ray beam passes through, and is modulated by, the epitaxial layer on the way into and/or out from a substrate reflection. The scans show multiple diffraction features from the substrate and new features which are due to the epitaxial layer. These modulations of Renniger scan intensity data, which we call MORSI, yield information about the orientation, lattice dimensions, and structural perfection of the sample in a variety of directions. In addition to the new features, changes are observed in the shape of a given multiple beam interaction from sample to sample. These appear to be due to differences in the perfection of substrate material. In this letter we report a MORSI study of a 1.4-μm-thick ZnSe layer grown by molecular beam epitaxy on a (001) oriented GaAs substrate using the GaAs (004) for the Renninger scan.


Related Articles

  • The role of absorption in x-ray diffraction measurements from epitaxial layers and substrates. Stevenson, Andrew W.; Pain, Geoff N. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p569 

    Presents information on a study which discussed the role of normal absorption in x-ray diffraction measurements of integrated Bragg intensities from epitaxial or other layers and their associated substrates in terms of the transmission factor. General form of the x-ray transmission factor;...

  • Structural Analysis and Lifetime Distribution of Electric Carriers in CdSe Epitaxial Layers. Cerbanic, G.; Burda, I.; Borodi, Gh.; Chicinas, I.; Vida Simitti, I.; Simon, S. // Modern Physics Letters B;1/30/2003, Vol. 17 Issue 2, p49 

    X-ray diffraction and scanning microscopy were used to analyze the structure of CdSe epitaxial layers. The structural data indicate the growth from CdSe layers of crystallites corresponding to the hexagonal modification. The lifetime distribution of electric carriers investigated by...

  • GaN grown on hydrogen plasma cleaned 6H-SiC substrates. Lin, M.E.; Strite, S.; Agarwal, A.; Salvador, A.; Zhou, G.L.; Teraguchi, N.; Rockett, A.; Morkoc, H. // Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p702 

    Reports the epitaxial gallium nitride (GaN) layers grown on 6H-silicon carbide (SiC) (0001) substrates. Techniques for the preparation of SiC substrate; Growth of high quality GaN on SiC substrates; Purpose of using the x-ray diffractometry.

  • Identification of hexagonal polycrystal in epitaxially grown InN by synchrotron x-ray diffraction and near-edge x-ray absorption fine structure spectroscopy. Lee, Ik Jae; Shin, Hyun-Joon; Chang, Suk Sang; Lee, Min Kyu; Kim, Hyung-Kook // Applied Physics Letters;5/5/2003, Vol. 82 Issue 18, p2981 

    The structures and crystallographic orientations of indium nitride films of varying thicknesses on sapphire(0001) were investigated using high-resolution synchrotron x-ray scattering and angle-dependent near-edge x-ray absorption fine structure (NEXAFS) spectroscopy with linearly polarized x...

  • Time-delayed indium incorporation in ultrathin (In[sub x]Ga[sub 1-x]N/GaN) multiple quantum wells grown by metalorganic vapor phase epitaxy. Schulze, F.; Bläsing, J.; Dadgar, A.; Krost, A. // Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4558 

    In[SUBx]Ga[SUB1-x]N/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy were investigated by x-ray reflectometry and high-resolution x-ray diffractometry. The combination of both analysis methods allows a very precise determination of the structural parameters of the layer...

  • X-ray diffraction studies of the epitaxy of a/b-axes oriented YBa2Cu3O7-δ films grown by liquid phase epitaxy. Sandiumenge, F.; Dubs, C.; Görnert, P.; Galí, S. // Journal of Applied Physics;5/15/1994, Vol. 75 Issue 10, p5243 

    Presents a study which explored an x-ray diffraction measurements of the epitaxy of a/b-axes oriented YBa[sub2]Cu[sub3]O[sub7-δ] films obtained by the liquid phase epitaxy technique. Background on the sample material; Description of the experimental setup; Results and discussion.

  • Formation of epitaxial Fe3-xSi1+x (0≤x≤1) silicides on Si(111). Hong, S.; Wetzel, P.; Gewinner, G.; Bolmont, D.; Pirri, C. // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5404 

    Presents information on a study which discussed the growth of epitaxial Fe[sub3-x]Si[sub1+x] films on silicon(111) by codeposition at room temperature. Experimental details; Measurements of x-ray photoelectron diffraction; Results of core-level photoemission; Conclusion.

  • High-resolution x-ray study of thin GaN film on SiC. Kazimirov, A.; Faleev, N.; Temkin, H.; Bedzyk, M. J.; Dmitriev, V.; Melnik, Yu. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p6092 

    The x-ray standing wave method (XSW) and high-resolution x-ray diffraction were used to study the structural perfection and polarity of GaN epitaxial thin film grown by hydride vapor phase epitaxy on the Si-face SiC substrate. The x-ray standing wave was generated inside the 300 nm thin film...

  • Rocking curve peak shift in thin semiconductor layers. Wie, C. R. // Journal of Applied Physics;7/15/1989, Vol. 66 Issue 2, p985 

    Describes an x-ray diffraction method for determining layer composition and mismatch. Data on the rocking curves of a gallium arsenide epitaxial layer doped with an isoelectronic dopant; Plot of the separation between epilayer peak and substrate peak as a function of layer thickness.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics