Rapid thermal processing to improve the epitaxy of (100) silicon on (1102) sapphire

Pfeiffer, Loren; Phillips, Julia M.; Luther, K. E.; West, K. W.; Batstone, J. L.; Stevie, F. A.; Maurits, J. E. A.
February 1987
Applied Physics Letters;2/23/1987, Vol. 50 Issue 8, p466
Academic Journal
The heteroepitaxial quality of (100) Si films on (1102) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350 °C for at least several seconds. For a 6000-Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.


Related Articles

  • Annealing behaviors of dislocation loops near the projected range in high-dose As+- implanted (001)Si. Hsu, S. N.; Chen, L. J.; Wu, S. C. // Journal of Applied Physics;11/1/1990, Vol. 68 Issue 9, p4503 

    Presents a study that examined the annealing behaviors of dislocation formed near the projected range in silicon. Use of Rutherford backscattering spectrometry; Factors influencing the formation and growth of the loops; Temperature range by which silicon was annealed.

  • A comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II. Pai, C. S.; Lau, S. S.; Poker, D. B.; Hung, L. S. // Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4178 

    Presents a study which compared thermal annealing and ion mixing of multilayered nickel-tungsten films on silicon. Method of the study; Results and discussion; Conclusion.

  • Trapping of negative and positive charges in Ge[sup +] ion implanted silicon dioxide layers subjected to high-field electron injection. Nazarov, A. N.; Gebel, T.; Rebohie, L.; Skorupa, W.; Osiyuk, I. N.; Lysenko, V. S. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4440 

    Negative and positive charge trapping in a constant current regime under high-field electron injection both from Al electrode and Si substrate in high-dose Ge[sup +] ion implanted and then rapid thermal annealed thin-film dioxide has been studied. Negatively charged traps as well as generated...

  • Kinetic mechanism of the thermal-induced self-organization of Au/Si nanodroplets on Si(100): Size and roughness evolution. Ruffino, F.; Canino, A.; Grimaldi, M. G.; Giannazzo, F.; Roccaforte, F.; Raineri, V // Journal of Applied Physics;Jul2008, Vol. 104 Issue 2, p024310 

    Very thin Au layer was deposited on Si(100) using the sputtering technique. By annealing at 873 K Au/Si nanodroplets were formed and their self-organization was induced changing the annealing time. The evolution of droplet size distribution, center-to-center distance distribution, and droplet...

  • Laser annealing of sputter-deposited a-SiC and a-SiCN films. Fraga, M.; Massi, M.; Oliveira, I.; Origo, F.; Miyakawa, W. // Bulletin of Materials Science;2011, Vol. 34 Issue 7, p1375 

    This work describes the laser annealing of a-SiC and a-SiCN films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of a-SiCN thin films were produced under different N/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier...

  • Characterization of cesium diffusion in silicon dioxide films using backscattering spectrometry. Fishbein, Bruce J.; Plummer, James D. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1200 

    The diffusion of ion-implanted cesium in thermally grown SiO2 has been examined in the temperature range 700–1000 °C using Rutherford backscattering spectrometry (RBS). Silicon samples were oxidized and implanted with 5×1014 cm-2 133Cs at 145 keV and then annealed in nitrogen using...

  • Rapid thermal annealing of indium-implanted silicon single crystals. Shiryaev, S. Yu.; Larsen, A. Nylandsted; Safronov, N. // Journal of Applied Physics;6/1/1989, Vol. 65 Issue 11, p4220 

    Presents a study which reported results on the behavior of implanted indium (In) and on the structural damage in silicon during rapid thermal annealing for different implanted In doses. Experimental techniques used; Result of Rutherford back scattering spectrometry and channeling spectra for an...

  • Reversible structural changes in discharge-produced amorphous silicon. Hong, C. S.; Hwang, H. L. // Journal of Applied Physics;5/1/1987, Vol. 61 Issue 9, p4593 

    Investigates the reversible, structural changes of undoped hydrogenated amorphous silicon films under prolonged illumination and thermal annealing. Details on the experiment; Observation of the structural changes at different illumination levels; Correlation among the change in vibrating...

  • Rapid thermal annealing of YBaCuO films on Si and SiO2 substrates. Aslam, M.; Soltis, R. E.; Logothetis, E. M.; Ager, R.; Mikkor, M.; Win, W.; Chen, J. T.; Wenger, L. E. // Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p153 

    A very rapid thermal annealing technique has been employed on sputter-deposited YBaCuO films. After an O2 anneal (with or without a N2 preanneal) at temperatures as high as 920 °C for 8–12 s, films on (100)Si and on SiO2 /Si substrates exhibited superconductivity onsets above 95 K and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics