Rapid thermal processing to improve the epitaxy of (100) silicon on (1102) sapphire

Pfeiffer, Loren; Phillips, Julia M.; Luther, K. E.; West, K. W.; Batstone, J. L.; Stevie, F. A.; Maurits, J. E. A.
February 1987
Applied Physics Letters;2/23/1987, Vol. 50 Issue 8, p466
Academic Journal
The heteroepitaxial quality of (100) Si films on (1102) sapphire substrates (SOS) as measured by Rutherford backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal (RTA) after deposition which brings the Si temperature above 1350 °C for at least several seconds. For a 6000-Å (100) SOS film the (100) aligned to random RBS yield improves from 10% and 54% at the front and back interfaces, to as low as 3.2% and 13% after the RTA. The microtwin volume shows a corresponding decrease to under 1% from the as-grown value of 2.7%. A model based on isothermal solid phase epitaxial regrowth from the untwinned material near the front surface is proposed to account for these results.


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