Low-temperature film growth of Si by reactive ion beam deposition

Yamada, Hiroshi; Torii, Yasuhiro
February 1987
Applied Physics Letters;2/16/1987, Vol. 50 Issue 7, p386
Academic Journal
A new low-temperature film formation technique is proposed. It uses ionized species produced by an electron cyclotron resonance-type microwave ion source with reactive gases and controlled in the low ion energy region, less than about 500 eV. Good quality homoepitaxial films on Si(111) are obtained at 600 °C and 100–500 eV ion energy by using SiH4 as a material gas. By increasing the ion energy to 250-300 eV, homoepitaxial growth at 400 °C can be achieved. Polycrystalline Si films on the same type of substrates can also be obtained at 200 °C.


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